MIMMF200ZB040DK1
400V 200A
FRED Module
RoHS Compliant
PRODUCT FEATURES
Ultrafast Reverse Recovery Time
Soft Reverse Recovery Characteristics
Low Reverse Recovery Loss
Low Forward Voltage
High Surge Current Capability
Low Inductance Package
APPLICATIONS
Inversion Welder
Uninterruptible Power Supply (UPS)
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
Power Factor Correction (PFC) Circuit
ABSOLUTE MAXIMUM RATINGS
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
It
P
D
T
J
T
STG
Torque
Torque
R
θJC
Weight
2
T
C
=25°C unless otherwise specified
Test Conditions
Values
400
400
T
C
=100°C, Per Diode
100
200
150
150
1500
1800
11250
16200
625
-40 to +150
-40 to +125
Recommended（M6）
Recommended（M6）
Junction-to-Case
3½4.7
3½4.7
0.20
70
T
C
=100°C, Per Moudle
T
C
=100°C, 20KHz, Per Moudle
T
C
=100°C, Per Diode
1/2 Cycle , 50Hz, Sine
1/2 Cycle , 60Hz, Sine
T
J
=45°C, t=10ms, 50Hz, Sine
T
J
=45°C, t=8.3ms, 60Hz, Sine
Unit
V
V
A
A
A
A
A
A
A
2
s
A
2
s
W
°C
°C
N·m
N·m
°C /W
g
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
I t (For Fusing)
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Module Electrodes
Thermal Resistance
2
MIMMF200ZB040DK1
ELECTRICAL CHARACTERISTICS
Symbol
I
RM
V
F
t
rr
t
rr
I
RRM
t
rr
I
RRM
Parameter
Reverse Leakage Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Time
Max. Reverse Recovery Current
Test Conditions
V
R
=400V
V
R
=400V, T
J
=125°C
I
F
=100A
I
F
=100A, T
J
=125°C
I
F
=1A, V
R
=30V, di
F
/dt=-200A/μs
V
R
=200V, I
F
=100A
di
F
/dt=-200A/μs, T
J
=25°C
V
R
=200V, I
F
=100A
di
F
/dt=-200A/μs, T
J
=125°C
T
C
=25°C unless otherwise specified
Min.
--
--
--
--
--
--
--
--
--
Typ.
--
--
1.1
1.0
38
95
8.5
150
14
Max.
0.5
1
1.35
1.25
--
--
--
--
--
Unit
mA
mA
V
V
ns
ns
A
ns
A
300
250
200
150
T
J
=25°C
300
250
200
t
rr
(ns)
T
J
=125°C
V
R
=200V
T
J
=125°C
I
F
(A)
150
100
I
F
=200A
50
0
I
F
=100A
I
F
=50A
100
50
0
0
1
1.5
2.5
2
V
F
（V）
Figure1. Forward Voltage Drop vs Forward Current
0.5
0
400
600
800
1000
di
F
/dt（A/μs）
Figure2. Reverse Recovery Time vs di
F
/dt
200
60
50
40
V
R
=200V
T
J
=125°C
3
2.5
2
Q
rr
(μc)
I
F
=200A
I
F
=100A
I
F
=50A
V
R
=200V
T
J
=125°C
I
RRM
(A)
I
F
=200A
I
F
=100A
I
F
=50A
30
20
10
0
0
1.5
1
0.5
0
400
600
1000
800
di
F
/dt（A/μs）
Figure3. Reverse Recovery Current vs di
F
/dt
200
400
600
800
1000
di
F
/dt（A/μs）
Figure4. Reverse Recovery Charge vs di
F
/dt
0
200
MIMMF200ZB040DK1
1.5
1.2
0.9
K
f
0.6
I
RRM
0.3
0.0
Q
rr
t
rr
1
10
Z
thJC
(K/W)
-1
10
-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-3
100 125 150
75
T
J
(°C)
Figure5. Dynamic Parameters vs Junction Temperature
0
25
50
10
-4
-1
10
-4
10
-3
10
-2
10
1
Rectangular Pulse Duration (seconds)
Figure6. Transient Thermal Impedance
Dimensions (mm)
Figure7. Package Outline
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
