IRFHM830DPbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
4.3
13
1.1
40
V
mΩ
nC
Ω
A
D 5
D
6
4 G
3
S
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
D 7
D
8
2 S
1 S
h
3.3mm x 3.3mm PQFN
Applications
•
Synchronous MOSFET for Buck Converters
Features and Benefits
Features
Low R
DSon
(≤ 4.3mΩ)
Schottky intrinsic diode with low forward voltage
Benefits
Lower Conduction Losses
Lower switching losses
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
⇒
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM830DTRPbF
IRFHM830DTR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
±20
20
16
40
40
160
2.8
37
Units
V
g
g
c
h
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
0.022
-55 to + 150
Notes
through
are on page 8
1
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2013 International Rectifier
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December 16, 2013
IRFHM830DPbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
3.4
5.7
1.8
-6.0
–––
–––
–––
–––
–––
27
13
2.9
1.8
4.5
3.8
6.3
10
1.1
9.8
20
9.1
6.7
1797
363
148
Conditions
Max. Units
–––
V V
GS
= 0V, I
D
= 1mA
––– V/°C Reference to 25°C, I
D
= 4mA
4.3
V
GS
= 10V, I
D
= 20A
mΩ
V
GS
= 4.5V, I
D
= 20A
7.1
2.35
V V
DS
= V
GS
, I
D
= 50μA
––– mV/°C V
DS
= V
GS
, I
D
= 1mA
500
μA
V
DS
= 24V, V
GS
= 0V
5
mA V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 20A
–––
nC V
GS
= 10V, V
DS
= 15V, I
D
= 20A
20
V
DS
= 15V
–––
–––
V
GS
= 4.5V
nC
–––
I
D
= 20A
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Max.
82
20
Conditions
MOSFET symbol
showing the
integral reverse
G
S
pF
Avalanche Characteristics
E
AS
I
AR
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
d
Min.
–––
–––
Typ.
–––
–––
Units
mJ
A
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
40
h
D
A
Ã
160
–––
––– 0.85
V
–––
16
24
ns
–––
17
26
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
2
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Submit Datasheet Feedback
Max.
3.4
37
46
31
Units
°C/W
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©
2013 International Rectifier
December 16, 2013
IRFHM830DPbF
1000
TOP
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
1000
TOP
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10
2.8V
10
2.8V
≤
60μs
PULSE WIDTH
1
0.1
1
Tj = 25°C
1
10
100
0.1
1
≤
60μs
PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 20A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60μs
PULSE WIDTH
0.1
1.5
2
2.5
3
3.5
4
4.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14
ID= 20A
VDS= 24V
VDS= 15V
VDS= 6V
10000
C, Capacitance (pF)
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
Ciss
1000
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2013 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
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December 16, 2013
IRFHM830DPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
100
100μsec
10
1msec
10msec
10
T J = 25°C
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.10
1
10
100
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
75
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
2.5
ID, Drain Current (A)
50
2.0
1.5
25
ID = 1.0A
1.0
ID = 10mA
ID = 5.0mA
ID = 2.0mA
ID = 1.0mA
0
25
50
75
100
125
150
T C , Case Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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2013 International Rectifier
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December 16, 2013
IRFHM830DPbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
T J = 125°C
ID = 20A
350
EAS , Single Pulse Avalanche Energy (mJ)
300
250
200
150
100
50
0
25
50
75
ID
TOP
5.8A
11A
BOTTOM 20A
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2013 International Rectifier
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December 16, 2013
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