IRFH8334PbF
V
DS
V
GS
max
30
± 20
9.0
13.5
7.1
25
V
V
mΩ
nC
A
HEXFET
®
Power MOSFET
R
DS(on) max
(@V
GS
= 10V)
(@V
GS
= 4.5V)
Q
g typ.
I
D
(@T
c(Bottom)
= 25°C)
i
PQFN 5X6 mm
Applications
•
Control MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 4.1°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
O rderable part number Package Type
IRFH8334TRPBF
IRFH8334TR2PBF
PQ FN 5mm x 6mm
PQ FN 5mm x 6mm
Standard Pack
Form
Q uantity
Tape and Reel
4000
Tape and Reel
400
Note
EO L notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
Power Dissipation
Max.
30
± 20
14
12
44
Units
V
g
Power Dissipation
g
c
hi
28
hi
25
i
100
3.2
30
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
0.026
-55 to + 150
Storage Temperature Range
Notes
through
are on page 9
1
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2014 International Rectifier
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January 13, 2014
IRFH8334PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
14
7.0
4.6
1180
260
110
Max. Units
–––
–––
9.0
13.5
2.35
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
mΩ
V
GS
= 4.5V, I
D
= 16A
V
V
DS
= V
GS
, I
D
= 25µA
mV/°C
e
e
µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 20A
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
nA
S
nC
nC
nC
Ω
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8Ω
V
GS
= 0V
pF
V
DS
= 10V
ƒ = 1.0MHz
Max.
35
20
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
13
Max. Units
25
A
100
1.0
20
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
–––
19
29
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 380 A/µs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Ambient
g
Junction-to-Ambient
g
f
Junction-to-Case
f
Junction-to-Case
Parameter
Typ.
–––
–––
–––
–––
Max.
4.1
37
39
26
Units
°C/W
2
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2014 International Rectifier
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January 13, 2014
IRFH8334PbF
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
1
2.5V
1
0.1
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 150°C
10
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
1.0
1
2
3
4
5
6
7
8
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
Ciss
Coss
Crss
VDS= 24V
VDS= 15V
VDS= 6.0V
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2014 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
January 13, 2014
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IRFH8334PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10
Limited by
Source Bonding
Technology
100µsec
100
T J = 150°C
10
T J = 25°C
i
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
DC
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
45
Limited By Source
Bonding Technology
Fig 8.
Maximum Safe Operating Area
2.8
VGS(th) , Gate threshold Voltage (V)
40
35
ID, Drain Current (A)
i
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
ID = 25µA
30
25
20
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
ID = 250µA
ID = 1.0mA
ID = 1.0A
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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January 13, 2014
IRFH8334PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
30
EAS , Single Pulse Avalanche Energy (mJ)
160
ID = 20A
25
140
120
100
80
60
40
20
0
ID
TOP
3.7A
8.2A
BOTTOM 20A
20
15
T J = 125°C
10
T J = 25°C
5
0
5
10
15
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2014 International Rectifier
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January 13, 2014
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