IRFH5302DPbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
2.5
0.65
19
100
V
mΩ
V
ns
A
PQFN 5X6 mm
V
SD
max
(@I
S
= 5.0A)
t
rr (typical)
I
D
(@T
c(Bottom)
= 25°C)
h
Applications
•
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Benefits
Low RDSon (<2.5mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
⇒
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5302DTRPBF
IRFH5302DTR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
Pulsed Drain Current
Max.
30
± 20
29
23
100
100
400
3.6
104
0.83
-55 to + 150
Units
V
g
Power Dissipation
g
Power Dissipation
c
h
@ 10V
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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March 17, 2015
IRFH5302DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.25
2.0
3.1
1.80
-10
–––
–––
–––
–––
–––
55
26
6.2
4.0
7.9
7.9
11.9
19
1.9
16
30
20
12
3635
680
260
Max. Units
–––
–––
2.5
3.7
2.35
–––
500
5.0
100
-100
–––
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
nC
Conditions
V
V
GS
= 0V, I
D
= 500μA
V/°C Reference to 25°C, I
D
= 1.0mA
mΩ
V
mV/°C
μA
mA
nA
S
nC
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 50A
V
GS
= 10V, V
DS
= 15V, I
D
= 50A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 50A
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
= 50A
e
e
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 50A
R
G
=1.8Ω
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Max.
130
50
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
–––
19
28
Max. Units
100
A
400
0.65
1.0
29
42
V
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 15V
di/dt = 300A/μs
e
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
f
Junction-to-Case
f
Junction-to-Case
Parameter
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
g
Junction-to-Ambient
g
Junction-to-Ambient
2
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2015 International Rectifier
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March 17, 2015
IRFH5302DPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 50A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
10
1.0
1
2
3
VDS = 15V
≤60μs
PULSE WIDTH
4
5
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
10000
Ciss
Coss
Crss
VDS= 24V
VDS= 15V
VDS= 6.0V
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
March 17, 2015
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IRFH5302DPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100μsec
100
1msec
100
T J = 150°C
10msec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
TJ = 25°C
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
160
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
60
40
20
0
25
50
75
ID, Drain Current (A)
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.01
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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2015 International Rectifier
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March 17, 2015
IRFH5302DPbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
7
EAS , Single Pulse Avalanche Energy (mJ)
600
ID = 50A
6
5
4
3
2
TJ = 25°C
1
0
5
10
15
20
500
400
300
200
100
0
25
50
75
ID
TOP
8.7A
16A
BOTTOM 50A
TJ = 125°C
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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©
2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015
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