StrongIRFET
IRFB7440GPbF
HEXFET
®
Power MOSFET
Applications
l
l
l
l
l
l
l
l
l
D
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
I
D (Package Limited)
D
40V
2.0m
2.5m
208A
120A
c
Benefits
G
l
l
l
l
l
D
S
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Halogen-Free
TO-220AB
IRFB7440GPbF
G
D
S
Gate
Drain
Source
Base Part Number
IRFB7440GPbF
Package Type
TO-220
Form
Tube
Standard Pack
Quantity
50
Orderable Part Number
IRFB7440GPbF
RDS(on), Drain-to -Source On Resistance (m
)
7.0
ID = 100A
6.0
5.0
4.0
3.0
2.0
T J = 25°C
1.0
4
6
8
10
12
14
16
18
20
T J = 125°C
240
200
ID, Drain Current (A)
Limited By Package
160
120
80
40
0
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
T C , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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© 2013 International Rectifier
July 11, 2013
IRFB7440GPbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Max.
208
147
120
772
Units
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
208
1.4
± 20
-55 to + 175
300
10lbf in (1.1N m)
W
W/°C
V
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (tested)
I
AR
E
AR
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Ãd
k
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
d
238
298
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Parameter
Typ.
–––
0.50
–––
Max.
0.72
–––
62
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.035
2.0
3.0
3.0
–––
–––
–––
–––
2.6
Max. Units
–––
–––
2.5
–––
3.9
1.0
150
100
-100
–––
V
V/°C
m
m
V
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5.0mA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
g
g
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.048mH
R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
1330A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400μs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.048mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
2
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© 2013 International Rectifier
July 11, 2013
IRFB7440GPbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
88
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
90
23
32
58
24
68
115
68
4730
680
460
845
980
Max. Units
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
g
g
ns
pF
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.9
6.8
24
28
17
20
1.3
Max. Units
193
772
1.3
–––
–––
–––
–––
–––
–––
A
Conditions
D
Ãd
f
Reverse Recovery Charge
Reverse Recovery Current
MOSFET symbol
showing the
G
A
integral reverse
p-n junction diode.
V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= 100A, V
DS
= 40V
ns T
J
= 25°C
V
R
= 34V,
T
J
= 125°C
I
F
= 100A
di/dt = 100A/μs
nC T
J
= 25°C
T
J
= 125°C
A
T
J
= 25°C
g
S
g
3
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© 2013 International Rectifier
July 11, 2013
IRFB7440GPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
4.5V
10
4.5V
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60μs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
VDS = 10V
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2013 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
July 11, 2013
IRFB7440GPbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
10
Limited by
package
10msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
100
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
T J = 175°C
0.1
VDS, Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
50
49
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Id = 5.0mA
Fig 10.
Maximum Safe Operating Area
0.8
VDS= 0V to 32V
0.6
Energy (μJ)
0.4
0.2
0.0
0
5
10
15
20
25
30
35
40
45
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
VGS = 5.5V
VGS = 6.0V
40
30
VGS = 7.0V
VGS = 8.0V
VGS =10V
20
10
0
0
100 200 300 400 500 600 700 800
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2013 International Rectifier
July 11, 2013
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