IRF7769L1TRPbF
RoHS Compliant, Halogen Free
l
Lead-Free (Qualified up to 260°C Reflow)
l
Ideal for High Performance Isolated Converter
Primary Switch Socket
l
Optimized for Synchronous Rectification
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
Industrial Qualified
l
Typical values (unless otherwise specified)
DirectFET Power MOSFET
V
DSS
Q
g
tot
V
GS
Q
gd
110nC
R
DS(on)
2.8mΩ@ 10V
100V min ±20V max
200nC
V
gs(th)
2.7V
S
S
S
S
S
S
D
G
S
S
D
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L8
DirectFET ISOMETRIC
L4
L6
L8
Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D
2
PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when
application note AN-1035
is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Part number
IRF7769L1TRPbF
Package Type
DirectFET Large Can
Parameter
Standard Pack
Form
Quantity
Tape and Reel
4000
Max.
Note
"TR" suffix
Units
V
Absolute Maxim um Ratings
V
DS
V
GS
I
D
@
I
D
@
I
D
@
I
D
@
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@
Continuous Drain Current, V
GS
@
Continuous Drain Current, V
GS
@
Continuous Drain Current, V
GS
@
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
100
±20
124
88
20
375
500
260
74
3.10
T
C
T
C
T
A
T
C
= 25°C
= 100°C
= 25°C
= 25°C
g
10V
(Silicon Limited)
10V
(Silicon Limited)
10V
(Silicon Limited)
10V
(Package Limited)
f
f
e
A
f
Ãg
h
TA= 25°C
mJ
A
12.00
Typical R DS(on), (mΩ)
(
DS(on) mΩ)
10.00
8.00
6.00
4.00
2.00
0.00
2.0
ID = 74A
3.00
VGS = 7.0V
VGS = 8.0V
VGS = 10V
2.90
VGS = 15V
2.80
20
40
60
80
100
TJ = 25°C
4.0 6.0
8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Typical R
TJ = 125°C
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
ID, Drain Current (A)
Fig 2.
Typical On-Resistance vs. Drain Current
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.09mH, R
G
= 25Ω, I
AS
= 74A.
1
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©
2012 International Rectifier
February 18, 2013
IRF7769L1TRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
410
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.02
2.8
2.7
-10
–––
–––
–––
–––
–––
200
30
9.0
110
51
119
53
1.5
44
32
92
41
11560
1240
590
6665
690
–––
–––
3.5
4.0
–––
20
250
100
-100
–––
300
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 25V
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
V
V/°C Reference to 25°C, I
D
= 2mA
mΩ V
GS
= 10V, I
D
= 74A
V
mV/°C
μA
nA
S
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 74A
V
DS
= 50V
nC
V
GS
= 10V
I
D
= 74A
See Fig. 9
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 74A
R
G
=1.8Ω
V
DS
= V
GS
, I
D
= 250μA
i
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ãi
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
75
220
124
A
500
1.3
112
330
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 74A, V
GS
= 0V
di/dt = 100A/μs
Ãg
T
J
= 25°C, I
F
= 74A, V
DD
= 50V
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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©
2012 International Rectifier
February 18, 2013
IRF7769L1TRPbF
Absolute Maximum Ratings
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
P
D
@T
A
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Parameter
f
f
c
Parameter
Max.
125
63
3.3
270
-55 to + 175
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJ-Can
R
θJ-PCB
10
Thermal Response ( ZthJC ) °C/W
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
fl
e
j
k
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.2
0.4
Units
°C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
0.1080
0.6140
0.4520
1.47e-05
0.000171
0.053914
0.006099
τi
(sec)
0.01
τ
1
τ
2
τ
3
τ
4
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
3
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Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
February 18, 2013
©
2012 International Rectifier
IRF7769L1TRPbF
1000
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM
10
100
1
3.5V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
3.5V
≤
60μs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
2.5
Fig 5.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VDS = 25V
≤
60μs PULSE WIDTH
100
ID = 74A
2.0
VGS = 10V
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
1.5
1
1.0
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
TJ , Junction Temperature (°C)
Fig 7.
Normalized On-Resistance vs. Temperature
14
ID= 74A
VDS= 80V
VDS= 50V
VDS= 20V
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
C, Capacitance (pF)
Ciss
Coss
Crss
1000
100
1
10
100
0
50
100
150
200
250
300
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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©
2012 International Rectifier
Fig 9.
Typical Total Gate Charge vs
Gate-to-Source Voltage
February 18, 2013
IRF7769L1TRPbF
1000
10000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
100
DC
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
100μsec
10
1
1
1msec
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
10
100
1000
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
125
4.0
Fig11.
Maximum Safe Operating Area
ID = 1.0A
VGS(th) Gate threshold Voltage (V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID = 1.0mA
100
ID = 250μA
ID , Drain Current (A)
75
50
25
0
25
50
75
100
125
150
175
-75 -50 -25
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
TJ , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
1200
Fig 13.
Typical Threshold Voltage vs.
Junction Temperature
I D
TOP
13A
20A
BOTTOM
74A
1000
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
5
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©
2012 International Rectifier
February 18, 2013
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