PD - 96414
IRF7737L2TRPbF
IRF7737L2TR1PbF
•
Advanced Process Technology
•
Optimized for Industrial Motor Drive, DC-DC and
•
•
•
•
•
•
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
D
DirectFET
®
Power MOSFET
V
(BR)DSS
40V
R
DS(on)
typ.
1.5mΩ
max.
1.9mΩ
I
D (Silicon Limited)
156A
Q
g
89nC
S
S
S
D
S
S
S
G
Applicable DirectFET
®
Outline and Substrate Outline
L6
DirectFET
®
ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to
achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.
The DirectFET® package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package
allows dual sided cooling to maximize thermal transfer.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
Units
V
f
f
e
f
e
g
Ãg
h
h
40
± 20
156
110
31
315
624
83
3.3
104
386
See Fig.18a, 18b, 16, 17
270
-55 to + 175
A
W
mJ
A
mJ
°C
g
Thermal Resistance
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
®
is a registered trademark of International Rectifier.
HEXFET
R
θJA
R
θJA
R
θJA
R
θJCan
R
θJ-PCB
fl
e
j
k
Parameter
Typ.
–––
12.5
20
–––
–––
0.56
Max.
45
–––
–––
1.8
0.5
Units
°C/W
f
W/°C
www.irf.com
1
10/27/11
IRF7737L2TR/TR1PbF
Static Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
40
–––
–––
2.0
–––
100
–––
–––
–––
–––
–––
Typ.
–––
0.03
1.5
3.0
-10
–––
0.6
–––
–––
–––
–––
Max.
–––
–––
1.9
4.0
–––
–––
–––
5
250
100
-100
Units
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 94A
V
V
DS
= V
GS
, I
D
= 150μA
mV/°C
V
DS
= 10V, I
D
= 94A
S
i
Ω
μA
nA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
89
18
8
34
29
42
39
12
19
22
14
5469
1193
534
4296
1066
1615
Typ.
–––
–––
–––
35
32
Max.
134
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
156
624
1.3
53
48
Units
Conditions
V
DS
= 20V, V
GS
= 10V
I
D
= 94A
nC
See Fig.11
nC
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 10V
I
D
= 94A
R
G
= 1.8Ω
V
GS
= 0V
V
DS
= 25V
Ãi
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 32V, f=1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
= 94A, V
GS
= 0V
I
F
= 94A, V
DD
= 20V
di/dt = 100A/μs
Diode Characteristics @ T
J
= 25°C (unless otherwise stated)
Units
A
I
S
I
SM
V
SD
t
rr
Q
rr
D
Ãg
G
S
V
ns
nC
i
i
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through
are on page 10
2
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IRF7737L2TR/TR1PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
1
4.5V
≤
60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
≤
60μs
PULSE WIDTH
Tj = 175°C
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance (m
Ω)
Fig 2.
Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance ( mΩ)
6
5
4
3
T J = 125°C
2
1
T J = 25°C
0
4
6
8
10
12
14
16
18
20
ID = 94A
2.8
2.5
2.2
1.9
1.6
1.3
1.0
5
30
55
80
105 130 155 180 205
ID, Drain Current (A)
TJ = 25°C
Vgs = 10V
TJ = 125°C
Fig 3.
Typical On-Resistance vs. Gate Voltage
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS, Gate -to -Source Voltage (V)
Fig 4.
Typical On-Resistance vs. Drain Current
2.0
ID, Drain-to-Source Current (A)
VDS = 25V
≤60μs
PULSE WIDTH
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 94A
VGS = 10V
100
10
T J = -40°C
TJ = 25°C
TJ = 175°C
1
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature
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3
IRF7737L2TR/TR1PbF
5.5
VGS(th) , Gate threshold Voltage (V)
1000
T J = -40°C
TJ = 25°C
TJ = 175°C
100
4.5
3.5
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 150μA
ISD, Reverse Drain Current (A)
10
2.5
VGS = 0V
1.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Threshold Voltage vs. Junction Temperature
300
Gfs, Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
250
T J = 25°C
200
150
T J = 175°C
100
50
0
0
20
40
60
80
100 120 140 160
ID,Drain-to-Source Current (A)
V DS = 10V
380μs PULSE WIDTH
100
1
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 9.
Typical Forward Transconductance Vs. Drain Current
14
ID= 94A
VDS= 32V
VDS= 20V
VDS= 8V
ID, Drain Current (A)
Fig 10.
Typical Capacitance vs.Drain-to-Source Voltage
160
140
120
100
80
60
40
20
0
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
0
25
50
75
100
125
25
50
75
100
125
150
175
QG, Total Gate Charge (nC)
T C , Case Temperature (°C)
Fig.11
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12.
Maximum Drain Current vs. Case Temperature
4
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IRF7737L2TR/TR1PbF
10000
450
EAS , Single Pulse Avalanche Energy (mJ)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
400
350
300
250
200
150
100
50
0
25
50
75
ID, Drain-to-Source Current (A)
1000
100μsec
100
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.10
1
10
100
VDS, Drain-to-Source Voltage (V)
10msec
DC
ID
TOP
13A
24A
BOTTOM 94A
100
125
150
175
Fig 13.
Maximum Safe Operating Area
10
Thermal Response ( Z thJC ) °C/W
Fig 14.
Maximum Avalanche Energy vs. Temperature
Starting T J , Junction Temperature (°C)
1
D = 0.50
0.20
0.10
0.1
0.02
0.01
0.05
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
4
Ri (°C/W)
0.00501
τ
τi
(sec)
18.81575
0.022853
0.000126
0.93035
0.17759
0.68769
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.00313
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 16.
Typical Avalanche Current Vs.Pulsewidth
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