IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT138Y-800E
4Q Triac
1 May 2015
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D
(TO-220AB) plastic package intended for use in general purpose bidirectional switching
and phase control applications. This sensitive gate "series E" triac can be interfaced
directly to microcontrollers, logic integrated circuits and other low power gate trigger
circuits. The internally insulated mounting base gives good thermal performance
combined with ease of handling and assembly by the user.
2. Features and benefits
•
•
•
•
•
•
•
•
•
2500 V RMS isolation voltage capability
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Industry standard TO-220 package for ease of handling
Isolated mounting base
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
•
•
230 V lamp dimmers
General-purpose switching and phase control
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 85 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
95
12
Unit
V
A
A
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TO
-2
20A
B
NXP Semiconductors
BT138Y-800E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
Typ
-
-
-
Max
10
10
25
Unit
mA
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT138Y-800E
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
Type number
BT138Y-800E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
2 / 13
NXP Semiconductors
BT138Y-800E
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 85 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
12
95
105
45
50
50
10
50
2
5
0.5
150
125
003aac231
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
G
= 20 mA; T2+ G+
I
G
= 20 mA; T2+ G-
I
G
= 50 mA; T2- G+
I
G
= 20 mA; T2- G-
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
30
I
T(RMS)
(A)
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aac230
over any 20 ms period
-
-40
-
15
I
T(RMS)
(A)
20
10
10
5
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz; T
mb
= 85 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
BT138Y-800E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
3 / 13
NXP Semiconductors
BT138Y-800E
4Q Triac
20
P
tot
(W)
15
003aac227
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
79
T
mb(max)
(°C)
90.5
α
α = 180°
120°
α
90°
60°
30°
102
10
5
113.5
0
0
2
4
6
8
10
12
I
T(RMS)
(A)
14
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
I
TSM
(A)
100
80
60
40
20
0
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
Total power dissipation as a function of RMS on-state current; maximum values
003aac228
120
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT138Y-800E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
1 May 2015
4 / 13
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