BUK9C10-55BIT
25 August 2014
D2
PA
K-7
N-channel TrenchPLUS logic level FET
Product data sheet
1. General description
Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET
technology. The device includes TrenchPLUS current sensing and integrated diodes
for temperature sensing. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
•
•
•
•
AEC-Q101 Compliant
Enables temperature monitoring due to integrated temperature sensor
Enables current sense measurement due to integrated current senseFET
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
•
•
•
12 V Automotive systems
Motors, lamps and solenoid control
Powertrain, chassis and body applications
4. Quick reference data
Table 1.
Symbol
R
DSon
Quick reference data
Parameter
drain-source on-state
resistance
Conditions
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 16; Fig. 17
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 16; Fig. 17
I
D
/I
sense
S
F(TSD)
ratio of drain current to -55 °C < T
j
< 175 °C; V
GS
= 5 V;
Fig. 18
sense current
temperature sense
diode temperature
coefficient
drain-source
breakdown voltage
temperature sense
diode forward voltage
I
F
= 250 µA; -55 °C ≤ T
j
≤ 175 °C;
Fig. 19
I
D
= 25 mA; V
GS
= 0 V; T
j
= 25 °C
I
F
= 250 µA; T
j
= 25 °C;
Fig. 19
55
2.855
-
2.9
-
2.945
V
V
10000 11000 12000 A/A
-5.7
-6
-6.3
mV/K
-
7.5
9
mΩ
Min
-
Typ
8.2
Max
10
Unit
mΩ
Static characteristics
V
(BR)DSS
V
F(TSD)
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NXP Semiconductors
BUK9C10-55BIT
N-channel TrenchPLUS logic level FET
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
mb
Pinning information
Symbol Description
G
IS
A
D
[1]
C
KS
S
D
gate
current sense
anode
drain
cathode
Kelvin source
source
mounting base
[1]
It is not possible to connect to pin 4 of the SOT427 package
4
123 567
Simplified outline
mb
Graphic symbol
D
A
G
IS
S
KS
C
003aad829
D2PAK-7 (SOT427)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK9C10-55BIT
D2PAK-7
Description
Plastic single-ended surface-mounted package (D2PAK-7); 7
leads (one lead cropped)
Version
SOT427
Type number
7. Marking
Table 4.
Marking codes
Marking code
28083 576
Type number
BUK9C10-55BIT
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2; Fig. 3
V
GS
= 5 V; T
mb
= 100 °C;
Fig. 2
BUK9C10-55BIT
All information provided in this document is subject to legal disclaimers.
Conditions
25 °C ≤ T
j
≤ 175 °C
R
GS
= 20 kΩ; 25 °C ≤ T
j
≤ 175 °C
Min
-
-
-15
-
[1]
Max
55
55
15
194
75
65
Unit
V
V
V
W
A
A
2 / 14
-
-
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
25 August 2014
NXP Semiconductors
BUK9C10-55BIT
N-channel TrenchPLUS logic level FET
Symbol
I
DM
T
stg
T
j
V
isol(FET-TSD)
Parameter
peak drain current
storage temperature
junction temperature
FET to temperature sense
diode isolation voltage
non-repetitive drain-source
avalanche energy
Conditions
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
Min
-
-55
-55
-
Max
401
175
175
100
Unit
A
°C
°C
V
Avalanche ruggedness
E
DS(AL)S
I
D
= 75 A; V
sup
≤ 55 V; V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped;
Fig. 4
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
HBM; C = 100 pF; R = 1.5 kΩ; all pins
HBM; C = 100 pF; R = 1.5 kΩ; pin 4 to
pin 7
[1]
[2]
[3]
[4]
120
P
der
(%)
80
[2][3][4]
-
215
mJ
Source-drain diode
I
S
I
SM
V
ESD
source current
peak source current
[1]
-
-
75
401
A
A
Electrostatic discharge
electrostatic discharge voltage
-
-
0.1
4
kV
kV
Current is limited by package
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
Repetitive rating defined in avalanche rating figure.
03na19
100
I
D
(A)
80
(1)
003aab885
60
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
(1) Capped at 75A due to package
Fig. 2.
Continuous drain current as a function of
mounting base temperature
BUK9C10-55BIT
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
25 August 2014
3 / 14
NXP Semiconductors
BUK9C10-55BIT
N-channel TrenchPLUS logic level FET
10
3
I
D
(A)
10
2
003aab897
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 µ s
100 µ s
10
DC
1 ms
10 ms
100 ms
1
10
-1
1
10
V
DS
(V)
10
2
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
I
AL
(A)
10
2
003aab922
(1)
(2)
10
(3)
1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Min
-
Typ
0.46
Max
0.78
Unit
K/W
R
th(j-a)
mounted on printed circuit board;
Fig. 6; Fig. 7; Fig. 8; Fig. 9
-
61.4
-
K/W
BUK9C10-55BIT
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
25 August 2014
4 / 14
NXP Semiconductors
BUK9C10-55BIT
N-channel TrenchPLUS logic level FET
1
Z
th (j-mb)
(K/W)
10
-1
δ = 0.5
0.2
0.1
0.02
003aab901
10
-2
0.05
P
δ=
t
p
T
single shot
t
p
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
80
003aab972
R
th(j-a)
K/W
60
40
001aag966
Fig. 7.
PCB used for thermal tests; zero heat sink area
20
0
200
A (mm
2
)
400
Zero airflow
Fig. 6.
Thermal resistance from junction to ambient as
a function of printed-circuit board (PCB) heat
sink area
001aag967
001aag968
Fig. 8.
PCB used for thermal tests; heat sink area 200
mm
2
Fig. 9.
PCB used for thermal tests; heat sink area 400
mm
2
BUK9C10-55BIT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
25 August 2014
5 / 14
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