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SE35G-C: 产品描述Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,; 产品类别分立半导体二极管; 文件大小397KB，共2页; 制造商SECOS; 官网地址http://www.secosgmbh.com/

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SE35G-C概述

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,

SE35G-C规格参数

参数名称	属性值
厂商名称	SECOS
包装说明	O-PALF-W2
Reach Compliance Code	compliant
ECCN代码	EAR99
应用	EFFICIENCY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.7 V
JEDEC-95代码	DO-27
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	125 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	3 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	600 V
最大反向电流	5 µA
最大反向恢复时间	0.025 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

SE35G-C文档预览

SE33G~SE35G

Elektronische Bauelemente

Voltage 200V ~ 600V

3.0 Amp Super Fast Recovery Rectifier

RoHS Compliant Product

A suffix of “-C” specifies and halogen free

FEATURES



DO-27

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

MECHANICAL DATA



Case：Molded plastic DO-27

Epoxy：UL 94V-0 rate flame retardant

Terminals：Solderable per MIL-STD-202

method 208

Polarity：Color band denotes cathode

Mounting position：Any

Weight：1.1 grams

REF.

Millimeter

Min.

Max.

25.4 (TYP)

7.20

9.50

4.80

5.60

1.10

1.30

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current T

=55°C

Peak Forward Surge Current,8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)

Maximum Instantaneous Forward Voltage @ 3.0A

Maximum DC Reverse Current At

Rated DC Blocking Voltage

Maximum Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

Operating Junction and Storage Temperature Range

Symbol

SE33G

RRM

RMS

F(AV)

FSM

θJC

, T

STG

0.92

200

140

200

Part Number

SE34G

400

280

400

3.0

125

1.25

5.0

150

-55~150

1.7

Unit

SE35G

600

480

600

μA

°C W

°C

=25°C

=125°C

Notes：

1. Reverse recovery test conditions I

= 0.5A, I

= 1.0A, I

= 0.25A.

2. Thermal Resistance junction to lead.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2013 Rev. B

Page 1 of 2

SE33G~SE35G

Elektronische Bauelemente

Voltage 200V ~ 600V

3.0 Amp Super Fast Recovery Rectifier

RATINGS AND CHARACTERISTICS CURVE

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2013 Rev. B

Page 2 of 2

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SE35G-C相似产品对比

	SE35G-C	SE34G-C	SE34G	SE33G-C	SE35G
描述	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,
厂商名称	SECOS	SECOS	SECOS	SECOS	SECOS
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.7 V	1.25 V	1.25 V	0.92 V	1.7 V
JEDEC-95代码	DO-27	DO-27	DO-27	DO-27	DO-27
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	125 A	125 A	125 A	125 A	125 A
元件数量	1	1	1	1	1
相数	1	1	1	1	1
端子数量	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	3 A	3 A	3 A	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	600 V	400 V	400 V	200 V	600 V
最大反向电流	5 µA	5 µA	5 µA	5 µA	5 µA
最大反向恢复时间	0.025 µs	0.025 µs	0.025 µs	0.02 µs	0.025 µs
表面贴装	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

SE35G-C

SE35G-C概述

SE35G-C规格参数

SE35G-C文档预览

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