IRLHS6376PbF
HEXFET
®
Power MOSFET
V
DS
V
GS
R
DS(on) max
(@V
GS
= 4.5V)
30
±12
63
82
3.4
V
V
m
Ω
m
Ω
A
X
@
D
W
Ã
Q
P
U
S2
G2
D1
D1
D2
6
'
'
R
DS(on) max
(@V
GS
= 2.5V)
7
(
)
*
*
G1
S1
I
D
(@T
c(Bottom)
= 25°C)
d
D2
'
6
'
2mm x 2mm Dual PQFN
7
(
)
Applications
•
Charge and discharge switch for battery application
•
Load/System Switch
Features and Benefits
Features
Low R
DSon
(≤ 63mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
IRLHS6376TRPBF
IRLHS6376TR2PBF
Package Type
PQFN Dual 2mm x 2mm
PQFN Dual 2mm x 2mm
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C(Bottom)
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V (Package Limited)
Pulsed Drain Current
Max.
30
±12
3.6
2.9
7.6
Units
V
d
A
f
Power Dissipation
f
Power Dissipation
c
d
4.9
d
3.4
d
30
1.5
6.6
0.012
-55 to + 150
W
W/°C
°C
Linear Derating Factor
Operating Junction and
f
Storage Temperature Range
Notes
through
are on page 2
1
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2014 International Rectifier
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January 21, 2014
IRLHS6376PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Min.
30
–––
–––
–––
0.5
–––
–––
–––
–––
–––
8.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.023
48
61
0.8
-3.6
–––
–––
–––
–––
–––
2.8
0.13
1.1
4.6
4.4
11
11
9.4
270
32
20
Max. Units
–––
–––
63
82
1.1
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
Ω
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 3.4A
V
GS
= 2.5V, I
D
V
DS
= V
GS
, I
D
= 10µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 3.4A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 3.4A
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
µA
nA
S
ed
= 3.4A
ed
h
Gate-to-Drain Charge
h
Gate-to-Source Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
h
d
d
(See Fig.17 & 18)
d
V
DD
= 10V, V
GS
= 4.5V
ID = 3.4A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
8.0
5.9
Max. Units
7.6
Conditions
MOSFET symbol
D
d
A
Ã
30
1.2
12
8.9
V
ns
nC
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 3.4A , V
GS
= 0V
T
J
= 25°C, I
F
= 3.4A , V
DD
= 15V
di/dt = 260A/µs
eÃ
d
d
e
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
g
g
Parameter
f
f
Typ.
–––
–––
–––
–––
Max.
19
175
86
69
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at
T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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2014 International Rectifier
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January 21, 2014
IRLHS6376PbF
100
TOP
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
100
TOP
VGS
10V
4.5V
3.0V
2.5V
2.0V
1.8V
1.5V
1.4V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
1.4V
0.1
1.4V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 7.6A
VGS = 4.5V
ID, Drain-to-Source Current (A)
10
TJ = 150°C
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
0.1
0.0
1.0
2.0
3.0
4.0
5.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 3.4A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
VDS= 6.0V
C, Capacitance (pF)
1000
Ciss
100
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
8
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2014 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
January 21, 2014
QG, Total Gate Charge (nC)
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IRLHS6376PbF
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
T J = 150°C
10
100µsec
1msec
1
T J = 25°C
1
Limited by
Wire Bond
DC
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
VSD, Source-to-Drain Voltage (V)
0.1
0
1
10
100
Fig 7.
Typical Source-Drain Diode Forward Voltage
8
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
ID = 10µA
VDS, Drain-to-Source Voltage (V)
7
6
5
4
3
2
1
0
25
50
75
ID, Drain Current (A)
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
100
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
10
D = 0.50
0.20
0.10
1
0.05
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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2014 International Rectifier
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January 21, 2014
IRLHS6376PbF
ID = 3.4A
120
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m
Ω)
140
300
250
200
150
100
50
0
0
5
10
15
20
25
30
ID, Drain Current (A)
VGS = 4.5V
VGS = 2.5V
100
TJ = 125°C
80
60
TJ = 25°C
40
0
2
4
6
8
10
12
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
50
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical On-Resistance vs. Drain Current
400
40
30
Single Pulse Power (W)
ID
TOP
0.78A
1.6A
BOTTOM 3.4A
300
200
20
10
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 15.
Typical Power vs. Time
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
dv/dt controlled by R
G
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Inductor Curent
Body Diode
Forward Drop
Ripple
≤
5%
I
SD
*
V
GS
= 5V for Logic Level Devices
Fig 16.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
5
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©
2014 International Rectifier
Submit Datasheet Feedback
January 21, 2014
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