PD - 97567A
IRLHM630PbF
HEXFET
®
Power MOSFET
V
DS
V
GS
max
R
DS(on) max
(@V
GS
= 4.5V)
30
±12
3.5
4.5
41
40
h
V
V
mΩ
mΩ
nC
A
D 5
D 6
D 7
D 8
4 G
3 S
2 S
1 S
R
DS(on) max
(@V
GS
= 2.5V)
3.3mm x 3.3mm PQFN
Q
g (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
Battery Operated DC Motor Inverter MOSFET
•
Secondary Side Synchronous Rectification MOSFET
Features and Benefits
Features
Low R
DSon
(<3.5mΩ)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRLHM630TRPBF
IRLHM630TR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Max.
30
±12
21
17
40
40
160
2.7
37
0.022
-55 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 8
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1
11/2/10
IRLHM630PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
30
–––
–––
–––
0.5
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
2.1
2.8
3.5
0.8
-3.8
–––
–––
–––
–––
–––
41
4.6
14
2.6
9.1
32
65
43
3170
330
250
Max. Units
–––
–––
3.5
4.5
1.1
–––
1.0
150
100
-100
–––
62
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
V
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 20A
mΩ
V
GS
= 2.5V, I
D
= 20A
V
V
DS
= V
GS
, I
D
= 50μA
mV/°C
V
DS
= 24V, V
GS
= 0V
μA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
nA
V
GS
= -12V
V
DS
= 10V, I
D
= 20A
S
V
DS
= 14V
nC V
GS
= 4.5V
I
D
= 20A (See Fig.17 & 18)
Ω
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
ns
R
G
=1.0Ω
See Fig.15
V
GS
= 0V
pF V
DS
= 25V
ƒ = 1.0MHz
e
e
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
Max.
80
20
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
20
Max. Units
40
A
160
1.2
30
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 10V
e
–––
30
45
nC di/dt = 400A/μs
Time is dominated by parasitic Inductance
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
3.4
37
46
31
Units
°C/W
2
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IRLHM630PbF
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1.3V
1
1.3V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 4.5V
100
T J = 150°C
10
T J = 25°C
1.0
1.0
1.5
VDS = 15V
≤60μs
PULSE WIDTH
2.0
2.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 20A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= 24V
VDS= 15V
VDS= 6.0V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRLHM630PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
T J = 150°C
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
DC
100μsec
10
TJ = 25°C
10msec
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
80
LIMITED BY PACKAGE
Fig 8.
Maximum Safe Operating Area
1.4
VGS(th), Gate threshold Voltage (V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID, Drain Current (A)
60
40
20
ID = 50μA
ID = 250μA
ID = 1.0mA
ID = 10mA
0
25
50
75
100
125
150
T C, Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLHM630PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
12
EAS , Single Pulse Avalanche Energy (mJ)
350
11
10
9
8
7
6
5
4
3
2
0
2
4
T J = 25°C
6
8
ID = 20A
300
250
200
150
100
50
0
ID
TOP
5.8A
11A
BOTTOM 20A
T J = 125°C
10
12
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
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5
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