IRLHM630PbF
HEXFET
®
Power MOSFET
V
DSS
V
GS
R
DS(on)
max
(@ V
GS
= 4.5V)
(@ V
GS
= 2.5V)
Qg
(typical)
I
D
(@T
C (Bottom)
= 25°C)
30
±12
3.5
4.5
41
40
nC
A
PQFN 3.3 x 3.3 mm
V
V
m
Applications
Battery Operated DC Motor Inverter MOSFET
Secondary Side Synchronous Rectification MOSFET
Features
Low R
DSon
(< 3.5m)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (< 1.0 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRLHM630TRPbF
IRLHM630TR2PBF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 12
21
17
40
40
160
2.7
37
0.022
-55 to + 150
W
W/°C
°C
A
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Note
EOL notice # 259
Units
V
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Notes
through
are on page 9
1
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September 25, 2015
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
–––
0.5
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRLHM630PbF
Typ.
–––
2.1
2.2
2.5
3.5
0.8
-3.8
–––
–––
–––
–––
–––
41
4.6
14
2.6
9.1
32
65
43
3170
330
250
Max.
–––
–––
3.2
3.5
4.5
1.1
–––
1
150
100
-100
–––
62
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
m V
GS
= 4.5V, I
D
= 20A
V
GS
= 2.5V, I
D
= 20A
V
V = V
GS
, I
D
= 50µA
mV/°C
DS
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V,V
GS
= 0V,T
J
= 125°C
V
GS
= 12V
nA
V
GS
= - 12V
S
V
DS
= 10V, I
D
= 20A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 20A (See Fig.17 & 18)
V
DD
= 10V, V
GS
= 4.5V
I
D
= 20A
ns
R
G
= 1.0
See Fig.15
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
80
20
Units
mJ
A
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
20
30
Max.
40
Units
A
160
1.2
30
45
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
D
G
S
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 400A/µs
Thermal Resistance
Parameter
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
3.4
37
46
31
Units
°C/W
2
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© 2015 International Rectifier
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September 25, 2015
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
IRLHM630PbF
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.6V
1.5V
1.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
1.3V
1.3V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 4.5V
100
T J = 150°C
10
T J = 25°C
VDS = 15V
60µs
PULSE WIDTH
1.0
1.0
1.5
2.0
2.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + Cgd, C ds SHORTED
C rss = Cgd
C oss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 20A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS = 24V
VDS = 15V
VDS = 6.0V
C, Capacitance (pF)
10000
C iss
C oss
C rss
1000
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2015 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
September 25, 2015
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1000
IRLHM630PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
T J = 150°C
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
DC
10msec
100µsec
10
T J = 25°C
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
80
LIMITED BY PACKAGE
60
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ID, Drain Current (A)
40
20
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 10mA
0
25
50
75
100
125
150
T C, Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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September 25, 2015
RDS(on), Drain-to -Source On Resistance (m
)
IRLHM630PbF
12
11
10
9
8
7
6
5
4
3
2
0
2
4
T J = 25°C
6
8
10
12
T J = 125°C
350
EAS , Single Pulse Avalanche Energy (mJ)
ID = 20A
300
250
200
150
100
50
0
25
50
75
ID
TOP
5.8A
11A
BOTTOM 20A
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
5
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© 2015 International Rectifier
Fig 15b.
Switching Time Waveforms
Submit Datasheet Feedback
September 25, 2015
stm32/stm8
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