PD -97781
IRLH7134PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
40
3.3
39
50
V
mΩ
nC
A
PQFN 5X6 mm
Q
g (typical)
I
D
(@T
c(Bottom)
= 25°C)
i
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low R
DSon
(≤4.7mW @ V
GS
= 4.5V )
Low Thermal Resistance to PCB (< 1.2°C/W)
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLH7134TRPBF
IRLH7134TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
40
± 16
26
21
134
85
50
640
3.6
104
Units
V
g
g
c
hi
hi
i
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
0.029
-55 to + 150
Notes
through
are on page 9
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1
4/24/12
IRLH7134PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
40
–––
–––
1.0
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
2.8
3.9
–––
-5.6
–––
–––
–––
–––
–––
39
9.0
4.5
16
9.5
20.5
23
0.6
21
75
18
13
3720
610
350
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250uA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
3.3
mΩ V
GS
= 10V, I
D
= 50A
4.9
V
GS
= 4.5V, I
D
= 40A
2.5
V
V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
V
DS
= 40V, V
GS
= 0V
20
μA
250
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
100
nA
-100
V
GS
= -16V
–––
S V
DS
= 10V, I
D
= 50A
58
–––
V
DS
= 20V
–––
V
GS
= 4.5V
nC
–––
I
D
= 50A
–––
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 20V, V
GS
= 10V
I
D
= 50A
R
G
=1.7Ω
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Max.
125
50
Conditions
MOSFET symbol
showing the
integral reverse
G
S
pF
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
Typ.
–––
–––
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
50
i
D
A
Ã
640
–––
–––
1.3
V
–––
25
38
ns
–––
74
110
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 20V
di/dt = 400A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
1.2
30
35
22
Units
°C/W
2
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IRLH7134PbF
1000
TOP
VGS
15.0V
10.0V
4.50V
4.00V
3.30V
3.10V
2.90V
2.70V
1000
TOP
VGS
15.0V
10.0V
4.50V
4.00V
3.30V
3.10V
2.90V
2.70V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10
10
2.70V
2.70V
1
0.1
1
≤60μs
PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
VDS = 25V
≤60μs
PULSE WIDTH
100
TJ = 150°C
10
TJ = 25°C
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Fig 2.
Typical Output Characteristics
ID = 50A
VGS = 10V
ID, Drain-to-Source Current(A)
0.1
1
2
3
4
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 50A
VDS= 32V
VDS= 20V
VDS= 8.0V
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRLH7134PbF
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
1000
100μsec
1msec
100
TJ = 150°C
100
10
TJ = 25°C
10
Limited by Package
DC
1
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
0.1
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
140
Fig 8.
Maximum Safe Operating Area
2.8
VGS(th), Gate threshold Voltage (V)
120
ID, Drain Current (A)
Limited By Package
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
100
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRLH7134PbF
Ω
RDS(on), Drain-to -Source On Resistance (m )
EAS , Single Pulse Avalanche Energy (mJ)
12
10
8
6
4
2
0
2
4
6
8
10
12
TJ = 25°C
ID = 50A
500
ID
TOP
9.5A
21A
BOTTOM 50A
400
300
TJ = 125°C
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
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