PD-97805
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRHY67434CM
IRHY63434CM
Radiation Level R
DS(on)
100K Rads (Si)
3.0Ω
300K Rads (Si)
3.0Ω
I
D
3.4A
3.4A
IRHY67434CM
550V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm
2
).
Their combination of very low
RDS(on)
and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
3.4
2.1
13.6
75
0.6
±20
97
3.4
7.5
8.1
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
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1
01/11/13
IRHY67434CM
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
550
—
—
2.0
3.7
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.51
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
3.0
4.0
—
10
25
100
-100
35
12
15
18
7.5
31
14
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 2.1A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 2.1A
Ã
VDS= 440V ,VGS=0V
VDS = 440V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 3.4A
VDS = 275V
VDD = 275V, ID = 3.4A
VGS =12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1267
79
1.1
1.1
—
—
—
—
pF
Ω
Measured from Drain lead (6mm /
0.25in
.
from package) to Source
lead
(
6mm /0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
3.4
13.6
1.0
741
2.1
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 3.4A, VGS = 0V
Ã
Tj = 25°C, IF = 3.4A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY67434CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
550
2.0
—
—
—
—
—
Max
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 440V, V
GS
= 0V
V
GS
= 12V, I
D
= 2.1A
V
GS
= 0V, I
D
= 3.4A
—
4.0
100
-100
10
2.9
1.0
1. Part numbers: IRHY67434CM and IRHY63434CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Kr
Xe
Au
LET
(MeV/(mg/cm ))
32.4
56.2
89.5
2
Energy
(MeV)
679
1060
1555
Range
(µm)
83.3
83.5
84
@V
GS
=-0V
V
DS
(V)
@V
GS
=-4V
@V
GS
=-12V
@V
GS
=-20V
550
550
550
550
550
550
550
550
-
550
-
-
800
Bias VDS (V)
600
400
200
0
0
-5
-10
Bias VGS (V)
-15
-20
Kr
Xe
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY67434CM
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
VGS
15V
12V
10V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
4.5V
1
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
10
T J = 25°C
T J = 150°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 3.4A
2.0
ID, Drain-to-Source Current (A)
1.5
1
1.0
0.1
VDS = 50V
60µs PULSE WIDTH
15
0.01
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY67434CM
2000
VGS, Gate-to-Source Voltage (V)
1600
100KHz
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID = 3.4A
16
VDS =
6
480V
VDS = 300V
VDS = 120V
C, Capacitance (pF)
1200
Ciss
12
800
8
400
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12 16 20 24 28 32 36 40
0
1
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10
T J = 150°C
1
T J = 25°C
10
1
100µs
1ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
10
100
VDS , Drain-to-Source Voltage (V)
10ms
0.1
VGS = 0V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
0.01
1000
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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