PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED
60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (LCC-6)
Product Summary
Part Number
IRHLUC7670Z4
IRHLUC7630Z4
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.75Ω
1.60Ω
0.75Ω
1.60Ω
I
D
0.89A
-0.65A
0.89A
-0.65A
CHANNEL
N
P
N
P
LCC-6
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
Pre-Irradiation
N-Channel
0.89
0.56
3.56
1.0
0.01
±10
20
Á
0.89
0.1
4.7
Â
-55 to 150
°C
300 (for 5s)
0.2 (Typical)
g
P-Channel
-0.65
-0.41
-2.6
1.0
0.01
Units
A
W
W/°C
±10
34
²
-0.65
0.1
-5.6
³
V
mJ
A
mJ
V/ns
www.irf.com
1
10/18/10
IRHLUC7670Z4, 2N7632UC
Pre-Irradiation
Electrical Characteristics For N-Channel Die @Tj = 25°C
(Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
1.0
—
0.25
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.07
—
—
-4.5
—
—
—
—
—
—
—
—
—
—
—
—
33
—
—
0.75
2.0
—
—
1.0
10
100
-100
3.6
1.5
1.8
8.0
15
30
12
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 0.56A
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 0.56A
Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.89A
VDS = 30V
VDD = 30V, ID = 0.89A,
VGS = 5.0V, RG = 24Ω
Ã
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
145
43
2.5
8.2
—
—
—
—
pF
Ω
Source-Drain Diode Ratings and Characteristics (Per N Channel Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
0.89
3.56
1.2
65
67
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 0.89A, VGS = 0V
Ã
Tj = 25°C, IF = 0.89A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per N Channel Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
Electrical Characteristics For P-Channel Die @Tj = 25°C
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-60
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.5
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
-0.06
—
—
3.6
—
—
—
—
—
—
—
—
—
—
—
—
33
—
—
1.60
-2.0
—
—
-1.0
-10
-100
100
3.6
1.5
1.8
23
22
32
26
—
IRHLUC7670Z4, 2N7632UC
(Unless Otherwise specified)
Typ Max Units
V
V/°C
Ω
V
mV/°C
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID = -0.41A
VDS = VGS, ID = -250µA
VDS = -10V, IDS = -0.41A
Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.65A
VDS = -30V
VDD = -30V, ID = -0.65A,
VGS = -5.0V, RG = 24Ω
Ã
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
147
46
8.1
52
—
—
—
—
pF
Ω
Source-Drain Diode Ratings and Characteristics (Per P Channel Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-0.65
-2.6
-5.0
35
9.8
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -0.65A, VGS = 0V
Ã
Tj = 25°C, IF = -0.65A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per P Channel Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
IRHLUC7670Z4, 2N7632UC
Radiation Characteristics
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For N-Channel Device @Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (LCC-6)
Diode Forward Voltage
Upto 300K Rads (Si)
1
Min
60
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 0.56A
V
GS
= 4.5V, I
D
= 0.56A
V
GS
= 0V, I
D
= 0.89A
—
2.0
100
-100
1.0
0.60
0.75
1.2
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
62 ± 5%
85 ± 5%
2
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
40
-6V
60
30
-
-7V
35
-
-
70
60
50
40
30
20
10
0
0
-1
-2
-3
VGS
-4
-5
-6
-7
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
VDS
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHLUC7670Z4, 2N7632UC
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For P-Channel Device @Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (LCC-6)
Diode Forward Voltage
Upto 300K Rads (Si)
1
Min
-60
-1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V
V
GS
= 10V
V
DS
= -48V, V
GS
= 0V
V
GS
= -4.5V, I
D
= -0.41A
V
GS
= -4.5V, I
D
= -0.41A
V
GS
= 0V, I
D
= -0.65A
—
-2.0
-100
100
-1.0
1.40
1.60
-5.0
1. Part numbers IRHLUC7670Z4, IRHLUC7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
62 ± 5%
85 ± 5%
2
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
6V
-60
-60
-
7V
-50
-
-
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
Bias VGS (V)
Bias VDS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
DigiKey得捷技术专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
