PD-97811
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number
IRHLNM87Y20
IRHLNM83Y20
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
15mΩ
15mΩ
I
D
17A*
17A*
IRHLNM87Y20
20V, N-CHANNEL
R8
TECHNOLOGY
SMD-0.2
(METAL LID)
International Rectifier’s R8
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
300 (for 5s)
0.25 (Typical)
17*
17*
68
36
0.3
±12
37
17
3.6
3.75
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
07/09/13
IRHLNM87Y20
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
20
—
—
—
1.0
—
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.028
12
11
—
-4.2
—
—
—
—
—
18
5.0
4.0
18
73
24
10
1.0
2336
596
147
0.76
—
—
15
14
2.3
—
—
1.0
10
100
-100
24
7.2
6.3
24
150
32
18
—
—
—
—
V
V/°C
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 4.5V, ID = 17A*
Ã
VGS = 7.0V, ID = 17A*
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 17A
Ã
VDS = 16V ,VGS = 0V
VDS = 16V,
VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
VGS = 5.5V, ID = 17A
VDS = 10V
VDD = 10V, ID = 17A
VGS = 5.5V, RG = 2.35Ω
m
Ω
V
mV/°C
S
µA
nA
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
C oss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
nC
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 20V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
17*
68
1.0
41
33
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 17A, VGS = 0V
Ã
Tj = 25°C, IF = 17A, di/dt
≤
100A/µs
VDD
≤
20V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC
Junction-to-Case
Min Typ Max Units
—
—
3.5
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLNM87Y20
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (SMD-0.2)
Diode Forward Voltage
Upto 300K Rads (Si)
1
Min
20
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
mΩ
mΩ
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 12V
V
GS
= -12V
V
DS
= 16V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 10.2A
V
GS
= 4.5V, I
D
= 17A
V
GS
= 0V, I
D
= 17A
—
2.3
100
-100
1.0
32
15
1.0
1. Part numbers IRHLNM87Y20, IRHLNM83Y20
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
37 ± 5%
60 ± 5%
81 ± 5%
2
Energy
(MeV)
298 ± 5%
320 ± 5%
375 ± 7.5%
Range
(µm)
38 ± 5%
32 ± 7.5%
28 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
18
18
18
-1V
18
18
18
-2V
15
-3V
12
12
-5V
8
8
6
-10V
4
-
-
20
Bias VDS (V)
16
12
8
4
0
0
-2
-4
-6
-8
-10
Bias VGS (V)
LET=37 ± 5%
LET=60 ± 5%
LET=81 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLNM87Y20
Pre-Irradiation
100
TOP
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
2.5V
2.25V
100
TOP
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
2.5V
2.25V
10
BOTTOM
1
2..25V
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
2.25V
20µs PULSE WIDTH,
Tj =150°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
20µs PULSE WIDTH
Tj = 25°C
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
1.6
ID = 17A
1.4
ID, Drain-to-Source Current (A)
10
T J = 150°C
1
T J = 25°C
1.2
(Normalized)
1.0
0.8
VDS = 20V
20µs PULSE WIDTH
15
01
1
1.5
2
2.5
3
3.5
4
VGS, Gate-to-Source Voltage (V)
0.6
VGS = 4.5V
0.4
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLNM87Y20
RDS(on), Drain-to -Source On Resistance (m
Ω)
45
40
35
30
25
20
15
10
5
0
0
2
4
6
ID = 17A
RDS(on), Drain-to -Source On Resistanc (m
Ω)
50
30
25
TJ = 150°C
20
15
10
5
V
GS
= 4.5V
0
0
10
20
30
40
50
60
70
T J = 25°C
T J = 150°C
T J = 25°C
8
10
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
40
2.5
VGS(th) Gate threshold Voltage (V)
ID = 250
µ
$
38
2.0
36
1.5
34
1.0
32
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
30
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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