PD-97339
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLG77214
100K Rads (Si) 1.1Ω
IRHLG73214
300K Rads (Si)
1.1Ω
I
D
0.8A
0.8A
2N7614M1
IRHLG77214
250V, Quad N-CHANNEL
TECHNOLOGY
International Rectifier’s R7
TM
Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
MO-036AB
Features:
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C
ID @ VGS = 4.5V, TC= 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
0.8
0.5
3.2
1.4
0.01
±10
50.4
0.8
0.14
12.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
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1
02/25/11
IRHLG77214, 2N7614M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device
@ Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
—
1.0
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.34
—
—
-6.0
—
—
—
—
—
—
—
—
—
—
—
—
10
—
—
1.1
2.0
—
—
1.0
10
100
-100
15
3.5
8.3
18
85
35
30
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 0.5A
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 0.5A
Ã
VDS= 200V ,VGS= 0V
VDS = 200V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
VDS = 125V
VDD = 125V, ID = 0.8A,
VGS = 4.5V, RG = 7.5Ω
Ã
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
ns
nH
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
552
69
1.43
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
6.77 —
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
290
388
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 0.8A, VGS = 0V
Ã
Tj = 25°C, IF = 0.8A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLG77214, 2N7614M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036AB)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
250
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 200V, V
GS
=0V
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 0V, I
D
= 0.8A
—
2.0
100
-100
10
??
1.1
1.2
1. Part numbers IRHLG77214, IRHLG73214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
38 ± 5%
62 ± 5%
85 ± 5%
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
250
250
250
-2V
250
250
250
-4V
250
250
250
-5V
250
250
250
-6V
250
250
-
-7V
250
-
-
300
250
200
150
100
50
0
0
-1
-2
-3
-4
-5
-6
-7
Bias VGS (Volts)
Bias VDS (Volts)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLG77214, 2N7614M1
Pre-Irradiation
10
TOP
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
4.5V
4.0V
3.5V
3.0V
2.75V
2.50V
2.25V
10
TOP
VGS
10V
4.5V
4.0V
3.5V
3.0V
2.75V
2.50V
2.25V
BOTTOM
1
1
2.25V
0.1
0.1
6
0
µ
s PULSE WIDTH, Tj=25°C
2.25V
1
10
100
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 0.8A
2.0
ID, Drain-to-Source Current (A)
T J = 150°C
1
T J = 25°C
1.5
1.0
0.5
0.1
2
2.2
2.4
VDS = 50V
15
60µs PULSE WIDTH
2.6
2.8
3
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLG77214, 2N7614M1
RDS(on), Drain-to -Source On Resistance (Ω)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
4
6
8
ID = 0.8A
RDS(on), Drain-to -Source On Resistance (
Ω)
2.0
1.6
1.4
1.2
1.0
0.8
T J = 25°C
0.6
0.4
Vgs = 4.5V
0.2
0
0.5
1
1.5
2
2.5
3
3.5
4
ID, Drain Current (A)
T J = 150°C
T J = 150°C
T J = 25°C
10
12
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR) DSS , Drain-to-Source Breakdown Voltage (V)
350
3.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
330
2.5
2.0
310
1.5
290
1.0
270
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
250
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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