PD-97311A
IRHF67230
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number
IRHF67230
IRHF63230
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.145
0.145
I
D
9.1A
9.1A
TO-39
200V, N-CHANNEL
R6
TECHNOLOGY
Description
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 90
(MeV/(mg/cm
2
). The combination of low R
DS
(on) and low
gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Features
Low R
DS
(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
9.1
5.7
36.4
25
0.2
± 20
23
9.1
2.5
4.8
-55 to + 150
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the page 2.
1
2017-02-20
IRHF67230
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
R
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
200
–––
–––
2.0
–––
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Test Conditions
––– –––
V
V
GS
= 0V, I
D
= 1.0mA
0.22 –––
V/°C Reference to 25°C, I
D
= 1.0mA
––– 0.145
V
GS
= 12V, I
D
= 5.7A
–––
4.0
V
V
DS
= V
GS
, I
D
= 1.0mA
-9.76 ––– mV/°C
––– –––
S
V
DS
= 15V, I
D
= 5.7A
–––
10
V
DS
= 160V, V
GS
= 0V
µA
–––
25
V
DS
= 160V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
–––
45
I
D
= 9.1A
nC
V
DS
= 100V
–––
12
V
GS
= 12V
–––
30
–––
17
V
DD
= 100V
I
D
= 9.1A
–––
30
ns
–––
40
R
G
= 7.5
V
GS
= 12V
–––
25
7.0
1374
214
4.2
1.1
–––
–––
–––
–––
–––
nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internally
bonded from Source pin to Drain pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.1
36.4
1.2
317
2.91
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 9.1A, V
GS
=0V
T
J
= 25°C ,I
F
= 9.1A, V
DD
50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
JC
Junction-to-Case
Min.
–––
Typ.
–––
Max.
5.0
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 50V, starting T
J
= 25°C, L = 0.56mH, Peak I
L
= 9.1A, V
GS
= 12V
V
I
SD
9.1A, di/dt
347A/µs, V
DD
200V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 160
volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2017-02-20
IRHF67230
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total
ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and
specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance (TO-3)
Static Drain-to-Source On--State
Resistance (TO-39)
Diode Forward Voltage
Up to 300 kRads(Si)
1
Min.
Max.
200
–––
2.0
4.0
–––
100
–––
-100
–––
10
–––
–––
–––
0.145
0.145
1.2
Units
V
V
nA
nA
µA
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D
= 5.7A
V
GS
= 12V, I
D
= 5.7A
V
V
GS
= 0V, I
D
= 9.1A
1. Part numbers IRHF67230 and IRHF63230
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
42 ± 5%
61 ± 5%
90 ± 5%
Energy
(MeV)
2450 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
205 ± 5%
66 ± 7.5%
80 ± 5%
@ VGS = 0V
200
200
170
VDS (V)
@ VGS = -5V @ VGS = -10V @ VGS = -15V
200
200
170
200
200
–––
190
190
–––
250
Bias VDS (V)
200
150
100
50
0
0
-5
-10
-15
Bias VGS (V)
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the page 2.
3
2017-02-20
LET=42 ± 5%
LET=61 ± 5%
LET=90 ± 5%
IRHF67230
Pre-Irradiation
100
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
100
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
10
10
5.0V
5.0V
60s PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
60s PULSE WIDTH
Tj =150°C
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
2.5
Fig 2.
Typical Output Characteristics
ID = 9.1A
2.0
10
T J = 150°C
T J = 25°C
1
VDS = 50V
6s PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
RDS(on) , Drain-to -Source On Resistance (m
Fig 4.
Normalized On-Resistance Vs.
Temperature
RDS(on), Drain-to -Source On Resistance (m
)
500
450
400
350
300
250
200
150
100
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 150°C
ID = 9.1A
500
400
T J = 150°C
300
200
T J = 25°C
100
0
10
20
V
GS
= 12V
30
40
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2017-02-20
IRHF67230
Pre-Irradiation
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
260
5.5
ID = 1.0mA
5.0
VGS(th) Gate threshold Voltage (V)
250
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
240
230
220
ID = 50µA
ID = 250µA
210
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
200
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
2800
2400
2000
1600
1200
800
400
0
1
10
100
VGS = 0V,
f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 8.
Typical Threshold Voltage Vs
Temperature
20
18
VGS, Gate-to-Source Voltage (V)
ID = 9.1A
16
14
12
10
8
6
4
2
0
0
5
10
VDS = 160V
VDS = 100V
VDS = 40V
C, Capacitance (pF)
Ciss
Coss
Crss
FOR TEST CIRCUIT
SEE FIGURE 17
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
100
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
ISD, Reverse Drain Current (A)
8
10
ID, Drain Current (A)
VGS = 0V
1.5 1.75
2.0
T J = 150°C
6
T J = 25°C
4
1.0
2
0.1
0
0.25
0.5 0.75
1.0 1.25
VSD , Source-to-Drain Voltage (V)
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2017-02-20
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