IRGS4620DPbF
IRGB4620DPbF
IRGP4620D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 20A, T
C
=100°C
t
SC
≥
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.55V @ I
C
= 12A
Applications
•
Appliance Drive
•
Inverters
•
UPS
G
E
C
C
C
C
C
C
G
E
E
C
G
IRGB4620DPbF
TO-220AC
G
C
E
G
C
E
n-channel
G
Gate
IRGS4620DPbF
D
2
Pak
IRGP4620DPbF
TO-247AC
IRGP4620D-EPbF
TO-247AD
C
Collector
E
Emitter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE (ON)
temperature coefficient and tight
distribution of parameters
5µs Short Circuit SOA
Lead-Free, RoHS Compliant
Base part number
Package Type
Benefits
High efficiency in a wide range of applications and switching
Improved reliability due to rugged hard switching
performance and high power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Tube
50
Tube
25
Tube
25
Orderable Part Number
IRGS4620DPbF
IRGS4620DTRRPbF
IRGS4620DTRLPbF
IRGB4620DPbF
IRGP4620DPbF
IRGP4620D-EPbF
Max.
600
32
20
36
48
16
10
48
±20
±30
140
70
-40 to +175
300
10 lbf·in (1.1 N·m)
Units
V
A
IRGS4620DPbF
IRGB4620DPbF
IRGP4620DPbF
IRGP4620D-EPbF
Absolute Maximum Ratings
D Pak
TO-220AB
TO-247AC
TO-247AD
2
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
V
W
C
Notes
through
are on page 7
1
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© 2014 International Rectifier
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November 14, 2014
IRGS/B/P4620D/EPbF
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D
2
Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
–––
–––
–––
Max.
1.07
1.12
3.66
3.71
–––
40
40
62
Units
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
0.40
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
—
1.55
—
1.90
Collector-to-Emitter Saturation Voltage
V
CE(on)
—
1.97
Gate Threshold Voltage
4.0
—
V
GE(th)
Threshold Voltage Temp. Coefficient
—
-18
ΔV
GE(th)
/ΔT
J
gfe
Forward Transconductance
—
7.7
—
2.0
I
CES
Collector-to-Emitter Leakage Current
—
475
Gate-to-Emitter Leakage Current
I
GES
—
—
—
2.1
V
FM
Diode Forward Voltage Drop
—
1.6
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Total Gate Charge
—
25
Q
g
Gate-to-Emitter Charge
—
7.0
Q
ge
Q
gc
Gate-to-Collector Charge
—
11
E
on
Turn-On Switching Loss
—
75
E
off
Turn-Off Switching Loss
—
225
Total Switching Loss
—
300
E
total
t
d(on)
Turn-On delay time
—
31
t
r
Rise time
—
17
Turn-Off delay time
—
83
t
d(off)
t
f
Fall time
—
24
Turn-On Switching Loss
—
185
E
on
E
off
Turn-Off Switching Loss
—
355
E
total
Total Switching Loss
—
540
Turn-On delay time
—
30
t
d(on)
t
r
Rise time
—
18
Turn-Off delay time
—
102
t
d(off)
t
f
Fall time
—
41
Input Capacitance
—
765
C
ies
C
oes
Output Capacitance
—
52
C
res
Reverse Transfer Capacitance
—
23
RBSOA
SCSOA
Erec
t
rr
I
rr
2
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
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© 2014 International Rectifier
5.0
—
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 100µA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
1.85
I
C
= 12A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 12A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 12A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 350µA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 12A, PW = 80µs
—
µA V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±100
nA V
GE
= ±20V
3.1
V
I
F
= 12A
—
I
F
= 12A, T
J
= 175°C
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 12A
V
GE
= 15V
V
CC
= 400V
I
C
= 12A, V
CC
= 400V, V
GE
=15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH,
T
J
= 25°C
Energy losses include tail & diode
reverse recovery
I
C
= 12A, V
CC
= 400V, V
GE
=15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH,
T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 48A
V
CC
= 480V, Vp
≤
600V
R
G
= 22Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp
≤
600V
R
G
= 22Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 12A, V
GE
= 15V,
Rg = 22Ω, L = 200µH, L
S
= 150nH
November 14, 2014
Conditions
µJ
ns
µJ
ns
pF
FULL SQUARE
—
280
68
19
—
—
—
—
µs
µJ
ns
A
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IRGS/B/P4620D/EPbF
40
150
125
30
100
20
Ptot (W)
IC (A)
75
50
10
25
0
25
50
75
100
T C (°C)
125
150
175
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs.
Case Temperature
100
10µsec
10
IC (A)
100µsec
IC (A)
1000
1msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
1
100
VCE (V)
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
45
40
35
30
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
45
40
35
20
15
10
5
0
0
1
2
3
4
VCE (V)
5
ICE (A)
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
30
25
20
15
10
5
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
7
8
0
1
2
3
4
VCE (V)
5
6
7
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
3
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© 2014 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
Submit Datasheet Feedback
November 14, 2014
IRGS/B/P4620D/EPbF
45
40
35
30
ICE (A)
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
70
60
50
IF (A)
25
20
15
10
5
0
0
1
2
3
4
VCE (V)
5
6
7
8
40
30
20
10
0
0.0
-40°c
25°C
175°C
1.0
2.0
VF (V)
3.0
4.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
VCE (V)
VCE (V)
Fig. 8
- Typ. Diode Forward Voltage Drop
Characteristics
20
18
16
14
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 6.0A
ICE = 12A
ICE = 24A
12
10
8
6
4
2
0
ICE = 6.0A
ICE = 12A
ICE = 24A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
50
T J = 25°C
T J = 175°C
40
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 6.0A
ICE = 12A
ICE = 24A
ICE (A)
30
20
10
0
15
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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© 2014 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
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November 14, 2014
IRGS/B/P4620D/EPbF
800
700
600
1000
Swiching Time (ns)
tdOFF
100
tF
tdON
10
tR
Energy (µJ)
500
400
300
200
100
0
0
EOFF
EON
10
IC (A)
20
30
1
5
10
15
IC (A)
20
25
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V
500
450
400
350
Energy (µJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V
1000
EOFF
Swiching Time (ns)
300
250
200
150
100
50
0
25
50
75
100
125
EON
tdOFF
100
tF
tdON
tR
10
0
25
50
75
100
125
RG (Ω)
Rg (
Ω)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 12A; V
GE
= 15V
25
RG = 10Ω
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 12A; V
GE
= 15V
25
20
20
RG = 22Ω
IRR (A)
IRR (A)
15
15
10
RG = 47Ω
RG = 100Ω
10
5
0
0
10
IF (A)
20
30
5
0
25
50
75
100
125
RG (Ω)
Fig. 18
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
5
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© 2014 International Rectifier
Fig. 19
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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November 14, 2014
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