IRGS4615DPbF
IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
=
15A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 175°C
G
E
E
G
G
C
C
C
C
E
V
CE(on) typ.
=
1.55V @ 8A
n-channel
G
D
2
-Pak
IRGS4615DPbF
TO-220AB
IRGB4615DPbF
C
E
Applications
•
Appliance Drives
•
Inverters
•
UPS
Gate
Collector
Em itter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE(ON)
temperature coefficient and tighter distribution of
parameters
5μs short circuit SOA
Lead-free, RoHS compliant
→
Benefits
High efficiency in a wide range of applications and switching frequencies
Improved reliability due to rugged hard switching performance and higher
power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Package Type
D PAK
TO-220AB
2
Standard Pack
Form
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Orderable Part Number
Quantity
50
800
800
50
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
TO-220
Max.
600
23
15
Units
V
fÃ
24
32
14
9
32
± 20
± 30
99
50
-40 to + 175
300
10lbf. In (1.1 N.m)
A
V
W
°C
1
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2014 International Rectifier
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IRGS/B4615DPbF
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case -(each IGBT)
Thermal Resistance, Junction-to-Case -(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
d
d
Thermal Resistance, Junction-to-Ambient (PCB mount D PAK)
Thermal Resistance, Junction-to-Ambient ( Socket mount: TO-220)
2
h
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.51
3.66
–––
40
62
Units
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage —
—
Collector-to-Emitter Saturation Voltage
—
V
CE(on)
—
Gate Threshold Voltage
4.0
V
GE(th)
—
Δ
V
GE(th)
/
Δ
TJ Threshold Voltage temp. coefficient
gfe
Forward Transconductance
—
—
I
CES
Collector-to-Emitter Leakage Current
—
—
V
FM
Diode Forward Voltage Drop
—
Gate-to-Emitter Leakage Current
—
I
GES
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
—
—
V
V
GE
= 0V, I
c
=100
μA
0.3
—
V/°C V
GE
= 0V, I
c
= 250μA ( 25 -175
o
C )
I
C
= 8.0A, V
GE
= 15V, T
J
= 25°C
1.55 1.85
I
C
= 8.0A, V
GE
= 15V, T
J
= 150°C
1.95
—
V
I
C
= 8.0A, V
GE
= 15V, T
J
= 175°C
2.00
—
V
CE
= V
GE
, I
C
= 250μA
—
6.5
V
— mV/°C V
CE
= V
GE
, I
C
= 250μA ( 25 -175
o
C )
-18
V
CE
= 50V, I
C
= 8.0A, PW =80
μ
s
5.6
—
S
—
25
μA
V
GE
= 0V,V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
400
—
I
F
= 8.0A
1.80
2.8
V
I
F
= 8.0A, T
J
= 175°C
1.30
—
—
±100 nA V
GE
= ± 20 V
e
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
trr
Irr
Conditions
Typ. Max. Units
19
—
I
C
= 8.0A
5
—
nC V
CC
= 400V
8
—
V
GE
= 15V
70
—
I
C
= 8.0A, V
CC
= 400V, V
GE
= 15V
145
—
μJ
R
G
= 47
Ω
, L=1mH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail and diode reverse recovery
—
215
—
I
C
= 8.0A, V
CC
= 400V
30
—
ns R
G
= 47
Ω
, L=1mH, L
S
= 150nH
15
—
T
J
= 25°C
95
—
20
165
—
I
C
= 8.0A, V
CC
= 400V, V
GE
= 15V
240
—
μJ
R
G
= 47
Ω
, L=1mH, L
S
= 150nH, T
J
= 175°C
Energy losses include tail and diode reverse recovery
—
405
—
I
C
= 8.0A, V
CC
= 400V
28
—
ns R
G
= 47
Ω
, L=1mH, L
S
= 150nH
17
—
T
J
= 175°C
117
—
35
535
—
V
GE
= 0V
pF V
CC
= 30V
45
—
15
—
f = 1Mhz
T
J
= 175°C, I
C
= 32A
FULL SQUARE
V
CC
= 480V, Vp =600V
R
G
= 47
Ω
, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
5
—
μs
—
R
G
= 47
Ω
, V
GE
= +15V to 0V
o
—
—
165
μJ
T
J
= 175 C
60
ns V
CC
= 400V, I
F
= 8.0A
—
—
—
14
—
A
V
GE
= 15V, Rg = 47
Ω
, L=1mH, L
S
=150nH
g
g
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100
μH,
R
G
= 47
Ω.
R
θ
is measured at T
J
approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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©
2013 International Rectifier
Submit Datasheet Feedback
November 14, 2014
IRGS/B4615DPbF
24
22
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
TC (°C)
125
150
175
110
100
90
80
70
Ptot (W)
IC (A)
60
50
40
30
20
10
0
25
50
75
100
TC (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
100
Fig. 2
- Power Dissipation vs. Case
Temperature
10μs
10
IC (A)
IC A)
1000
100μs
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
DC 1ms
1
100
10
100
1000
VCE (V)
Fig. 3
- Forward SOA,
T
C
= 25°C; T
J
≤
175°C
30
25
20
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
CE
= 15V
30
25
20
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
15
10
5
0
0
2
4
VCE (V)
6
8
15
10
5
0
0
2
4
V CE (V)
6
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
3
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©
2013 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
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November 14, 2014
IRGS/B4615DPbF
30
25
20
ICE (A)
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
70
60
50
40
30
20
-40°C
25°C
175°C
15
10
5
0
0
2
4
V CE (V)
6
8
10
0
0.0
1.0
2.0
VF (V)
3.0
4.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
20
18
16
14
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
ICE = 4.0A
ICE = 16A
VCE (V)
12
10
8
6
4
2
0
5
10
ICE = 8.0A
14
12
10
8
6
4
2
0
ICE = 4.0A
ICE = 16A
ICE = 8.0A
15
V GE (V)
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
35
30
TJ = 25°C
TJ = 175°C
ICE = 4.0A
ICE = 16A
25
ICE (A)
12
10
8
6
4
2
0
5
10
ICE = 8.0A
20
15
10
5
0
15
V GE (V)
20
0
5
V GE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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2013 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
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November 14, 2014
IRGS/B4615DPbF
500
450
400
Swiching Time (ns)
tdOFF
tF
tdON
10
1000
350
Energy (μJ)
100
300
250
200
150
100
50
0
0
EOFF
EON
tR
1
5
10
I C (A)
15
20
0
5
10
15
20
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 47Ω; V
GE
= 15V.
350
300
250
1000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 47Ω; V
GE
= 15V
EOFF
Swiching Time (ns)
Energy (μJ)
tdOFF
100
200
150
100
50
0
0
25
50
EON
tdON
tR
tF
10
75
100
125
0
25
50
75
100
125
RG (Ω)
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 8A; V
GE
= 15V
30
25
Fig. 16-
Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 8A; V
GE
= 15V
25
RG =10
Ω
20
20
RG =22
Ω
RG =47
Ω
RG = 100
Ω
IRR (A)
15
20
15
IRR (A)
15
10
10
5
5
0
0
5
10
0
0
25
50
75
100
125
IF (A)
RG (Ω)
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
5
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2013 International Rectifier
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 8.0A
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