IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
=
10A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 175°C
G
E
E
G
D-Pak
IRGR4610DPbF
G
D
2
-Pak
IRGS4610DPbF
C
C
C
C
E
G
C
E
V
CE(on) typ.
=
1.7V @ 6A
n-channel
G
TO-220AB
IRGB4610DPbF
C
E
Applications
•
Appliance Drives
•
Inverters
•
UPS
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE(ON)
temperature coefficient and tighter distribution of
parameters
5μs short circuit SOA
Lead-free, RoHS compliant
G ate
C ollector
Em itter
→
Benefits
High efficiency in a wide range of applications and switching frequencies
Improved reliability due to rugged hard switching performance and higher
power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
Package Type
IRGR4610DPbF
D-PAK
IRGS4610DPbF
IRGB4610DPbF
D PAK
TO-220AB
2
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Right
Tape and Reel Left
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Orderable Part Number
Quantity
75
2000
3000
3000
50
800
800
50
IRGR4610DPbF
IRGR4610DTRPbF
IRGR4610DTRRPbF
IRGR4610DTRLPbF
IRGS4610DPbF
IRGS4610DTRRPbF
IRGS4610DTRLPbF
IRGB4610DPbF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current ‚
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
TO-220
Max.
600
16
10
Units
V
c
c
18
24
10
6
24
± 20
± 30
77
39
-40 to + 175
300
10lbf. In (1.1 N.m)
A
V
W
°C
1
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October 25, 2013
IRGR/S/B4610DPbF
Thermal Resistance
R
θ
JC
R
θ
JC
R
θ
CS
d
Thermal Resistance, Junction-to-Case -(Diode)
d
Thermal Resistance, Junction-to-Case -(IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)
Parameter
Min.
–––
–––
Typ.
–––
–––
0.5
–––
–––
–––
–––
Max.
1.9
6.3
–––
50
110
40
62
Units
h
–––
–––
–––
–––
–––
°C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient (D-PAK)
Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)
2
(D PAK)
Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)
h
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage
600
V
(BR)CES
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage —
—
Collector-to-Emitter Saturation Voltage
—
V
CE(on)
—
Gate Threshold Voltage
4.0
V
GE(th)
—
Δ
V
GE(th)
/
Δ
TJ Threshold Voltage temp. coefficient
gfe
Forward Transconductance
—
—
I
CES
Collector-to-Emitter Leakage Current
—
—
V
FM
Diode Forward Voltage Drop
—
Gate-to-Emitter Leakage Current
—
I
GES
Typ.
—
0.36
1.7
2.07
2.14
—
-13
5.8
—
—
1.60
1.30
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
c
=100
μA
—
V/°C V
GE
= 0V, I
c
= 250μA ( 25 -175
o
C )
2.0
I
C
= 6.0A, V
GE
= 15V, T
J
= 25°C
—
V
I
C
= 6.0A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 6.0A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 150μA
—
mV/°C V
CE
= V
GE
, I
C
= 250μA ( 25 -175
o
C )
—
S
V
CE
= 25V, I
C
= 6.0A, PW =80μS
25
μA
V
GE
= 0V,V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
250
2.30
V
I
F
= 6.0A
—
I
F
= 6.0A, T
J
= 175°C
±100
nA V
GE
= ± 20 V
e
e
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 1.0mH, R
G
= 100Ω.
R
θ
is measured at T
J
approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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2013 International Rectifier
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October 25, 2013
IRGR/S/B4610DPbF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
trr
Irr
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
13
3.0
6.4
56
122
178
27
11
75
17
140
189
329
26
12
95
32
350
29
10
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
Conditions
I
C
= 6.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47
Ω
, L=1mH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail and diode reverse recovery
I
C
= 6.0A, V
CC
= 400V
R
G
= 47
Ω
, L=1mH, L
S
= 150nH
T
J
= 25°C
μJ
ns
fg
μJ
ns
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47
Ω
, L=1mH, L
S
= 150nH, T
J
= 175°C
Energy losses include tail and diode reverse recovery
I
C
= 6.0A, V
CC
= 400V
R
G
= 47
Ω
, L=1mH, L
S
= 150nH
T
J
= 175°C
fg
pF
FULL SQUARE
5
—
—
—
—
178
74
12
—
—
—
—
μs
μJ
ns
A
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
T
J
= 175°C, I
C
= 24A
V
CC
= 500V, Vp =600V
R
G
= 100
Ω
, V
GE
= +20V to 0V
V
CC
= 400V, Vp =600V
R
G
= 100
Ω
, V
GE
= +15V to 0V
o
T
J
= 175 C
V
CC
= 400V, I
F
= 6.0A
V
GE
= 15V, Rg = 47
Ω
, L=1mH, L
S
=150nH
3
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October 25, 2013
IRGR/S/B4610DPbF
18
16
14
12
IC (A)
80
70
60
Ptot (W)
50
40
30
20
10
0
10
8
6
4
2
0
25
50
75
100
TC (°C)
125
150
175
25
50
75
100
TC (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs. Case
Temperature
100
10
IC (A)
100μsec
10μsec
10
IC A)
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
0
10
100
1000
Fig. 3
- Forward SOA,
T
C
= 25°C, T
J
≤
175°C, V
GE
= 15V
20
20
Fig. 4
- Reverse Bias SOA
T
J
= 175°C, V
GE
= 20V
VCE (V)
15
Top
ICE (A)
ICE (A)
10
V
= 10V
GE
Bottom VGE = 8.0V
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
Top
10
Bottom
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
5
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
4
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©
2013 International Rectifier
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
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October 25, 2013
IRGR/S/B4610DPbF
20
Top
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
20
18
16
14
12
IF (A)
15
Bottom
-40°C
25°C
175°C
ICE (A)
10
10
8
5
6
4
2
0
0
2
4
6
8
10
0
0.0
1.0
VF (V)
2.0
3.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
10
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
10
8
8
VCE (V)
ICE = 6.0A
4
ICE = 12A
VCE (V)
6
ICE = 3.0A
6
ICE = 3.0A
4
ICE = 6.0A
ICE = 12A
2
2
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
10
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
IC, Collector-to-Emitter Current (A)
18
16
14
12
10
8
6
4
2
0
4
8
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
T J = 25°C
T J = 175°C
VCE (V)
6
2
0
5
10
VGE (V)
15
20
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
5
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Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
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October 25, 2013
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