IRFS4321-7PPbF
Application
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
G
D
V
DSS
R
DS(on) typ.
max
150V
11.7m
14.7m
86A
S
I
D
Benefits
Low Rdson Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching &
EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
D
2
Pak 7Pin
G
D
S
Gate
Drain
Source
Base part number
IRFS4321-7PPbF
Package Type
D
2
Pak-7Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFS4321-7PPbF
IRFS4321TRL7PP
Max.
86
61
343
350
2.3
± 30
120
-55 to + 175
°C
300
Typ.
–––
–––
Max.
0.43*
40
Units
°C/W
W
W/°C
V
mJ
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Parameter
Thermal Resistance
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
R
JC
(end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes
through
are on page 2
1
www.irf.com
© 2013 International Rectifier
June 14, 2013
IRFS4321-7PPbF
Parameter
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
150
11.7
–––
–––
–––
–––
–––
0.8
–––
71
24
21
18
60
25
35
4460
390
82
–––
14.7
5.0
20
1.0
100
-100
–––
–––
110
V
Conditions
V
GS
= 0V, I
D
= 250µA
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
––– mV/°C Reference to 25°C, I
D
= 1mA
m V
GS
= 10V, I
D
= 34A
V
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
=150 V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
mA
V
DS
=150V,V
GS
= 0V,T
J
=125°C
nA
V
DS
= 25V, I
D
=50A
I
D
= 50A
nC
V
DS
= 75V
V
GS
= 10V
V
DD
= 98V
I
D
= 50A
ns
R
G
= 2.5
V
GS
= 10V
S
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
V
GS
= 0V
pF
V
DS
= 50V
ƒ = 1.0MHz
–––
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Diode Characteristics
Typ. Max. Units
–––
–––
–––
89
300
6.5
86
A
343
1.3
130
450
–––
V
ns
nC
A
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
D
G
S
T
J
= 25°C,I
S
= 50A,V
GS
= 0V
I
F
= 50A,
V
DD
= 128V
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
jmax
, starting T
J
= 25°C, L = 0.096mH, R
G
= 25, I
AS
= 50A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
400µs;
duty cycle
2%.
Ris measured at T
J
approximately 90°C
2
www.irf.com
© 2013 International Rectifier
June 14, 2013
1000
TOP
IRFS4321-7PPbF
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
5.0V
1
5.0V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
3.0
ID, Drain-to-Source Current
)
VGS = 10V
100
2.5
TJ = 175°C
10
2.0
1
TJ = 25°C
VDS = 25V
1.5
1.0
60µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
7000
6000
5000
4000
3000
2000
1000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 50A
VDS = 120V
VDS= 75V
VDS= 30V
16
C, Capacitance (pF)
Ciss
12
Coss
8
4
Crss
0
1
10
100
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
www.irf.com
© 2013 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
June 14, 2013
1000
IRFS4321-7PPbF
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
1msec
ISD, Reverse Drain Current (A)
100
100
TJ = 175°C
10
10
10msec
1
TJ = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
90
80
70
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
190
180
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
170
160
150
140
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
5.0
Fig 10.
Drain-to–Source Breakdown Voltage
500
EAS, Single Pulse Avalanche Energy (mJ)
4.0
400
I D
TOP
13A
20A
BOTTOM
50A
Energy (µJ)
3.0
300
2.0
200
1.0
100
0.0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
oss
Stored Energy
4
www.irf.com
© 2013 International Rectifier
Fig 12.
Maximum Avalanche Energy Vs. Drain Current
June 14, 2013
1
IRFS4321-7PPbF
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
2
3
3
Ri (°C/W)
(sec)
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1
Ci=
iRi
Ci=
iRi
0.085239 0.000052
0.18817 0.00098
0.176912 0.008365
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
Avalanche Current (A)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current vs. Pulse width
120
EAR , Avalanche Energy (mJ)
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 50A
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
= Allowable rise in junction temperature, not to exceed T
jmax
(assumed as 25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)·
t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
www.irf.com
© 2013 International Rectifier
June 14, 2013
综合技术交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
