IRFI7536GPbF
HEXFET
®
Power MOSFET
D
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
60V
2.7m
:
3.4m
:
86A
D
G
D
S
TO-220
Full-Pak
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
86
73
820
75
0.5
± 20
-55 to + 175
300 (1.6mm from case)
10lbf in (1.1N m)
Units
A
W
W/°C
V
°C
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
x
x
Avalanche Characteristics
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Ã
d
Thermal Resistance
Symbol
R
θJC
R
θJA
738
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Junction-to-Case
Junction-to-Ambient (PCB Mount)
ij
Parameter
Typ.
–––
–––
Max.
2.87
65
Units
°C/W
1
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Ocotber 16, 2013
IRFI7536GPbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
60
–––
–––
2.0
88
–––
–––
–––
–––
–––
–––
29
2.7
–––
–––
0.79
–––
–––
–––
–––
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
3.4
mΩ V
GS
= 10V, I
D
= 75A
4.0
V V
DS
= V
GS
, I
D
= 150µA
–––
S V
DS
= 25V, I
D
= 75A
–––
Ω
20
µA V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
250
100
nA V
GS
= 20V
-100
V
GS
= -20V
f
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
31
42
88
22
77
55
64
6600
720
400
1080
1400
195
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 75A
V
DS
= 30V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
DD
= 39V
I
D
= 75A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 48V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 48V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 48V
f
f
ns
pF
h
g
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.3
43
53
58
65
2.4
86
820
1.3
–––
–––
–––
–––
–––
–––
A
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ãd
Reverse Recovery Time
e
Reverse Recovery Charge
Reverse Recovery Current
p-n junction diode.
V T
J
= 25°C, I
S
= 75A, V
GS
= 0V
V/ns T
J
= 25°C, I
S
= 75A, V
DS
= 60V
ns T
J
= 25°C
V
R
= 51V,
T
J
= 125°C
I
F
= 75A
di/dt = 100A/µs
nC T
J
= 25°C
T
J
= 125°C
A T
J
= 25°C
f
f
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.26mH,
R
G
= 50Ω, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤
75A, di/dt
≤
890A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging
time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
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October 16, 2013
IRFI7536GPbF
1000
TOP
VGS
15V
12V
10V
6.0V
5.0V
4.75V
4.50V
4.25V
1000
TOP
VGS
15V
12V
10V
6.0V
5.0V
4.75V
4.50V
4.25V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.25V
10
4.25V
10
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.01
0.1
≤
60µs PULSE WIDTH
Tj = 175°C
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 75A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
VDS = 25V
≤60µs
PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 75A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 48V
VDS= 30V
VDS= 12V
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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October 16, 2013
IRFI7536GPbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 175°C
1msec
100
10msec
100µsec
10
T J = 25°C
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.1
100
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
72
ID = 1.0mA
70
68
66
64
62
60
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
80
ID, Drain Current (A)
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
3000
2500
2000
1500
1000
500
0
ID
TOP
8.6A
12A
BOTTOM 75A
Energy (µJ)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
4
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VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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October 16, 2013
IRFI7536GPbF
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τj
= 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
1.0E-01
1.0E+00
Fig 14.
Single Avalanche Event: Pulse Current vs. Pulse Width
800
700
EAR , Avalanche Energy (mJ)
600
500
400
300
200
100
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 75A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
75
100
125
150
175
Starting T J , Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
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October 16, 2013
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