IRFHM8334TRPbF
V
DS
V
GS
max
30
± 20
9.0
13.5
7.1
25
V
V
m
HEXFET
®
Power MOSFET
Top View
D 5
D 6
4 G
3 S
2 S
1 S
R
DS(on) max
(@V
GS
= 10V)
(@V
GS
= 4.5V)
:
Q
g typ.
I
D
(@T
c(Bottom)
= 25°C)
nC
A
D 7
D 8
h
PQFN 3.3 X 3.3 mm
Applications
•
Control MOSFET for high frequency buck converters
Features
Low Thermal Resistance to PCB (< 4.5°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
⇒
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFHM8334PBF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8334TRPBF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
Units
V
gh
27
gh
25
h
43
176
2.7
28
0.021
-55 to + 150
13
A
f
W
W/°C
°C
Notes
through
are on page 8
1
www.irf.com
© 2013 International Rectifier
May 21, 2013
IRFHM8334TRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
14
7.0
4.6
1180
260
110
Max. Units
–––
–––
9.0
13.5
2.35
–––
1.0
150
100
-100
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
nA
S
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
mV/°C Reference to 25°C, I
D
= 1.0mA
mΩ
V
mV/°C
µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 20A
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
d
= 16A
d
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8Ω
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
Min.
–––
–––
–––
–––
–––
Typ.
Max.
35
Units
mJ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ.
–––
–––
–––
13
19
Max. Units
25
Conditions
MOSFET symbol
D
h
A
V
ns
nC
showing the
integral reverse
G
S
176
1.0
20
29
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 380 A/µs
d
dÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
e
Junction-to-Case
e
Junction-to-Case
Parameter
Junction-to-Ambient
f
Junction-to-Ambient
f
Typ.
–––
–––
–––
–––
Max.
4.5
44
47
30
Units
°C/W
2
www.irf.com
© 2013 International Rectifier
May 21, 2013
IRFHM8334TRPbF
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
1
2.5V
1
0.1
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
1
2
3
4
5
6
7
8
1.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
Ciss
Coss
Crss
VDS= 24V
VDS= 15V
VDS= 6.0V
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
www.irf.com
© 2013 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
May 21, 2013
IRFHM8334TRPbF
1000
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
100µsec
1msec
100
T J = 150°C
10
Limited by
package
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
10
T J = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.01
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
50
Fig 8.
Maximum Safe Operating Area
2.8
VGS(th) , Gate threshold Voltage (V)
Limited By Source
Bonding Technology
40
ID, Drain Current (A)
i
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
ID = 25µA
30
20
ID = 250µA
ID = 1.0mA
ID = 1.0A
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com
© 2013 International Rectifier
May 21, 2013
IRFHM8334TRPbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
30
EAS , Single Pulse Avalanche Energy (mJ)
160
ID = 20A
25
140
120
100
80
60
40
20
0
ID
TOP
4.3A
9.0A
BOTTOM 20A
20
15
T J = 125°C
10
T J = 25°C
5
0
5
10
15
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
www.irf.com
© 2013 International Rectifier
May 21, 2013
LED专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
