CHR1080a98F
71-86GHz Down-converter
GaAs Monolithic Microwave IC
Description
LO
The CHR1080a98F is a multifunction
monolithic receiver, which integrates a
balanced sub-harmonic cold FET mixer, a LO
buffer, and a RF low noise amplifier.
It
is
designed
for
the
E-band
telecommunication application, particularly
well suited for the new generation of high
capacity backhaul.
The circuit is manufactured with a pHEMT
process, 0.10µm gate length.
It is available in chip form.
GLO
DLO
GX
DRF
I
Q
GRF
RF
Main Features
Conversion Gain (dB)
Conversion Gain
16
14
■ Broadband RF performances: 71-86GHz
■ 8dB Conversion Gain
■ 5dB Noise Figure
■ -10dBm Input Power at 1dB compression
■ DC bias: Vd=3.5V @Id=175mA
■ Chip size 3.43x2.24x0.07mm
12
10
8
6
4
2
0
71
73
75
77
79
81
RF Frequency (GHz)
83
85
LSB; IF= 10GHz
USB; IF= 10GHz
LSB; IF= 6GHz
USB; IF= 6GHz
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F
RF
RF Frequency
F
IF
IF frequency
G
Conversion gain
NF
Noise Figure
Min
71
DC
Typ
Max
86
12
Unit
GHz
GHz
dB
dB
8
5
Ref. : DSCHR1080a5093 - 03 Apr 15
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR1080a98F
Electrical Characteristics
71-86GHz Down-converter
Tamb.= +25°C, Vd = 3.5V
Symbol
Parameter
Min
Typ
FRF
RF Frequency range
71
FLO
LO Frequency range
34.5
FIF
IF output Frequency
DC
10
PLO
LO input power
0
1
(1)
Gc
Conversion gain
8
R_LO
LO input return loss
8
R_RF
RF input return loss
10
NF
Noise Figure
5
(1)
Im_rej
Image rejection
16
2LO Leak.
2LO Leakage to RF port
-38
RFin P1dB RF Input power @1dB compression
-10
(2)
Idt
Drain current (Id LO Buffer +Id LNA)
175
DLO, DRF
DC drain voltage (LO Buffer, LNA)
3.5
GLO, GX,
LO Buffer, Mixer, LNA DC gate voltage
-2
GRF
(1)
An external combiner 90° is required on I / Q.
(2)
LO drain quiescent current 85mA, LNA drain quiescent current 90mA.
Max
86
44
12
Unit
GHz
GHz
GHz
dBm
dB
dB
dB
dB
dBc
dBm
dBm
mA
V
V
These values are representative of on-wafer measurements made without bonding wires at
the RF & LO ports.
A ribbon (75 µm wide) connection at the RF and LO inputs (see chapter recommended chip
assembly) could improve the results.
Ref. : DSCHR1080a5093 - 03 Apr 15
2/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
71-86GHz Down-converter
Absolute Maximum Ratings
(1)
CHR1080a98F
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4V
V
Idt
Drain bias current
240
mA
Vg
Gate bias voltage
-3.0 to -1.4
V
Pin_LO
Maximum LO peak input power overdrive
(2)
+10
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Pad name
GRF
DRF
GX
DLO
GLO
Pad N
o
Parameter
Typical
Values
-2
3.5
-2
3.5
-2.2
Unit
V
V
V
V
V
6
LNA DC gate voltage
(1)
7
LNA DC drain voltage (90mA)
8
Mixer DC gate voltage
10
LO Buffer DC drain voltage (85mA)
12
LO Buffer DC gate voltage
5, 9, 11
Not connected
(1)
LNA gate voltage could be adjusted between -3.0V and -1.4V to perform gain control
Ref. : DSCHR1080a5093 - 03 Apr 15
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHR1080a98F
Typical on wafer Measurements
Tamb.= +25°C, Vd = +3.5V
71-86GHz Down-converter
Without specific comment:
GLO= -2.2V, GX= -2V, Pin_RF= -30dBm, Pin_LO= 1dBm, IF frequency = 10GHz
GRF to be tuned for I_DRF= 90mA ( GRF close to -2V)
LSB: RF= 2LO- IF; USB: RF= 2LO+ IF
Conversion Gain versus RF Frequency & IF Frequency
16
14
12
Conversion Gain (dB)
10
8
6
LSB; IF= 10GHz
4
USB; IF= 10GHz
2
LSB; IF= 6GHz
USB; IF= 6GHz
0
71
72
73
74
75
76
77
78
79
80
RF Frequency (GHz)
81
82
83
84
85
86
Ref. : DSCHR1080a5093 - 03 Apr 15
4/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
71-86GHz Down-converter
Typical on wafer Measurements
Tamb.= +25°C, Vd = +3.5V
CHR1080a98F
Image rejection versus RF Frequency & IF Frequency
40
38
36
IF= 10GHz; Infradyne mode
34
IF= 6GHz
32
Image Rejection (dBc)
IF= 10GHz; Supradyne mode
IF= 6GHz
30
28
26
24
22
20
18
16
14
12
10
71
72
73
74
75
76
77
78
79
80
RF Frequency (GHz)
81
82
83
84
85
86
Conversion Gain versus RF Frequency & Mixer voltage
16
14
12
Conversion Gain (dB)
10
8
6
4
Channel Q; VGX= -2V
Channel Q; VGX=-1.8V
Channel Q; VGX= -1.6V
2
Channel I; VGX= -2V
0
71
72
73
74
75
76
77
78
79
80
RF Frequency (GHz)
81
82
83
84
85
86
Channel I; VGX=-1.8V
Channel I; VGX= -1.6V
Ref. : DSCHR1080a5093 - 03 Apr 15
5/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
