SMP50N06: 产品描述Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB; 产品类别分立半导体晶体管; 文件大小566KB，共5页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SMP50N06概述

Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SMP50N06规格参数

	SMP50N06	SMP3P06	SMP16P06	SMP50N05
描述	Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	Power Field-Effect Transistor, 2.5A I(D), 60V, 1.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	Transistor	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
Reach Compliance Code	unknown	unknown	unknown	unknown
配置	SINGLE	SINGLE	Single	Single
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e0	e0	e0	e0
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
极性/信道类型	N-CHANNEL	P-CHANNEL	P-CHANNEL	N-CHANNEL
表面贴装	NO	NO	NO	NO
端子面层	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
ECCN代码	EAR99	EAR99	-	EAR99
最大漏极电流 (ID)	50 A	2.5 A	-	50 A
元件数量	1	1	-	1

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W