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SS210R4G

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN
产品类别分立半导体    二极管   
文件大小209KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SS210R4G概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN

SS210R4G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明GREEN, PLASTIC, SMB, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.85 V
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流50 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压100 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

SS210R4G文档预览

SS22 thru SS215
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.093 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A @ 25℃
I
F
= 2 A @ 100℃
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SS
22
20
14
20
SS
23
30
21
30
SS
24
40
28
40
SS
25
50
35
50
2
50
SS
26
60
42
60
SS
29
90
63
90
SS
210
100
70
100
SS
215
150
105
150
UNIT
V
V
V
A
A
V
F
0.5
0.4
0.4
0.70
0.65
0.85
0.70
0.1
0.95
0.80
V
I
R
dV/dt
R
θJL
R
θJA
T
J
T
STG
10
-
5
-
10000
24
70
-
5
mA
V/μs
O
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
- 55 to +125
- 55 to +150
- 55 to +150
C
C
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
SS2xx
(Note 1)
R5
Prefix "H"
R4
M4
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xx" defines voltage from 20V (SS22) to 150V (SS215)
EXAMPLE
PREFERRED P/N
SS26 R5
SS26 R5G
SS26HR5
PART NO.
SS26
SS26
SS26
H
AEC-Q101
QUALIFIED
PACKING CODE
R5
R5
R5
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
PEAK FORWARD SURGE CURRENT
(A)
2.5
2.0
1.5
1.0
0.5
0.0
50
60
70
80
90
100
110
120
130
140
150
160
LEAD TEMPERATURE .(
o
C)
RESISTIVE OR
INDUCTIVE LOAD
SS22-SS24
SS25-SS215
50
40
30
20
10
0
1
10
100
8.3ms Single Half Sine
Wave JEDEC Method
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD
a
CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
100
FIG. 4- TYPICALREVERSE CHARACTERISTICS
SS22-SS24
SS25-SS215
INSTANTANEOUS FORWARD
A
CURRENT (A)
10
SS25-SS26
INSTANTANEOUS REVERSE
A
CURRENT (mA)
10
TJ=125℃
1
SS22-SS24
SS29-SS210
1
SS215
PULSE WIDTH=300μs
1% DUTY CYCLE
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
0.1
TJ=75℃
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
a
100
SS29-SS215
SS22-SS24
SS25-SS26
10
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.95
4.25
3.48
1.99
0.90
5.10
0.10
0.15
Max
2.10
4.75
3.73
2.61
1.41
5.30
0.20
0.31
Unit (inch)
Min
0.077
0.167
0.137
0.078
0.035
0.201
0.004
0.006
Max
0.083
0.187
0.147
0.103
0.056
0.209
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: D1307005
Version: H13
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