IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
HIGH-PERFORMANCE
CMOS BUFFER
IDT54/74FCT827A/B
• Faster than AMD's Am29827 series
• Equivalent to AMD's Am29827bipolar buffers in pinout/function,
speed, and output drive over full temperature and voltage
supply extremes
• IDT54/74FCT827A equivalent to FAST™ speed
• IDT54FCT827B 35% faster than FAST
• I
OL
= 48mA (commercial) and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD's bilopar
Am29800 series (5µA max.)
µ
• MIlitary product compliant to MIL-STD-883, Class B
• Available in the following packages:
– Commercial: SOIC
– Military: CERDIP, LCC
FEATURES:
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced dual metal
CMOS technology.
The IDT54/74FCT827 10-bit bus drivers provide high-performance bus
interface buffering for wide data/address paths or buses carrying parity. The
10-bit buffers have NAND-ed output enables for maximum control flexibility.
All of the IDT54/74FCT800 high-performance interface family are de-
signed for high-capacitance load drive capability, while providing low-
capacitance bus loading at both inputs and outputs. All inputs have clamp
diodes and all outputs are designed for low-capacitance bus loading in high-
impedance state.
FUNCTIONAL BLOCK DIAGRAM
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
OE
1
OE
2
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
OCTOBER 2002
DSC-4612/5
© 2002 Integrated Device Technology, Inc.
IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
OE
1
D
1
D
0
NC
Y
0
2
7
OE
1
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
4
3
2
1
D
2
D
3
D
4
NC
D
5
D
6
D
7
5
6
7
8
9
10
11
12
1
3
1
4
2
8
2
6 25
24
23
22
21
20
19
Y
1
INDEX
V
CC
Y
2
Y
3
Y
4
NC
Y
5
Y
6
Y
7
1
5
1
6
1
7
1
8
GND
NC
D
8
D
9
OE
2
Y
9
OE
2
CERDIP/ SOIC
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
V
TERM
(3)
T
A
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage
with Respect to GND
Terminal Voltage
with Respect to GND
Operating Temperature
Temperature under BIAS
Storage Temperature
Power Dissipation
DC Output Current
0 to +70
–55 to +125
–55 to +125
0.5
120
–55 to +125
–65 to +135
–65 to +150
0.5
120
°C
°C
°C
W
mA
–0.5 to V
CC
–0.5 to V
CC
V
Commercial
–0.5 to +7
Military
–0.5 to +7
Unit
V
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
NOTE:
1. This parameter is measured at characterization but not tested.
LOGIC SYMBOL
10
10
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Input and Vcc terminals only.
3. Output and I/O terminals only.
D
0-9
Y
8
Y
0-9
Y
9
OE
1
OE
2
2
IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION
Pin Name
OEx
Dx
Yx
I/O
I
I
O
Description
When both are LOW, the outputs are enabled. When
either one or both are HIGH, the outputs are High Z.
10-bit data input
10-bit data output
FUNCTION TABLE
(1)
Inputs
OE
1
L
L
H
X
OE
2
L
L
X
H
Dx
L
H
X
X
Outputs
Yx
L
H
Z
Z
3-State
Function
Transparent
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
- 0.2V
Commercial: T
A
= 0°C to +70°C, V
CC
= 5.0V ±5%, Military: T
A
= -55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
V
IK
I
OS
V
OH
Off State (High Impedance)
Output Current
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
V
CC
= Max.
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
V
CC
= Max.
Input LOW Current
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
I
= V
CC
V
I
= 2.7V
V
I
= 0.5V
V
I
= GND
V
O
= V
CC
V
O
= 2.7V
V
O
= 0.5V
V
O
= GND
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Min.
2
—
—
—
—
—
—
—
—
—
—
–75
V
HC
V
HC
2.4
2.4
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
—
—
–0.7
–120
V
CC
V
CC
4.3
4.3
GND
GND
0.3
0.3
Max.
—
0.8
5
5
(4)
–5
(4)
–5
10
10
(4)
–10
(4)
–10
–1.2
—
—
—
—
—
V
LC
V
LC
(4)
0.5
0.5
µA
µA
Unit
V
V
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OH
= –32µA
V
CC
= Min
I
OH
= –300µA
I
OH
= –15mA MIL
V
IN
= V
IH
or V
IL
I
OH
= –24mA COM'L
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OL
= 300µA
V
CC
= Min
I
OL
= 300µA
I
OL
= 32mA MIL
V
IN
= V
IH
or V
IL
I
OL
= 48mA COM'L
V
mA
V
V
OL
Output LOW Voltage
V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not ttested.
3
IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
V
LC
= 0.2V; V
HC
= V
CC
- 0.2V
Symbol
I
CC
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
Test Conditions
(1)
V
CC
= Max.
V
IN
≥
V
HC
; V
IN
≤
V
LC
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
1
=
OE
2
= GND
LE = V
CC
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
OE
1
=
OE
2
= GND
LE = V
CC
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
OE
1
=
OE
2
= GND
LE = V
CC
Eight Bits Toggling
V
IN
≥
V
HC
V
IN
≤
V
LC
Min.
—
—
—
Typ.
(2)
0.2
0.5
0.15
Max.
1.5
2
0.25
Unit
mA
mA
mA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
≥
V
HC
V
IN
≤
V
LC
(FCT)
V
IN
= 3.4V
V
IN
= GND
—
1.7
4
mA
—
2
5
V
IN
≥
V
HC
V
IN
≤
V
LC
(FCT)
V
IN
= 3.4V
V
IN
= GND
—
3.2
6.5
(5)
—
5.2
14.5
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of
∆I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
/2 + fiNi)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for register devices (zero for non-register devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
4
IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
54/74FCT827A
Com'l.
Symbol
t
PLH
t
PHL
Parameter
Propagation Delay
Dx to Yx
Condition
(1)
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
C
L
= 300pF
(3)
R
L
= 500Ω
C
L
= 5pF
(3)
R
L
= 500Ω
C
L
= 50pF
R
L
= 500Ω
Min.
(2)
1.5
1.5
1.5
1.5
1.5
1.5
Max.
8
15
12
23
9
10
Min.
(2)
1.5
1.5
1.5
1.5
1.5
1.5
Mil.
Max.
9
17
13
25
9
10
54FCT827B
Mil.
Min.
(2)
Max.
1.5
6.5
1.5
1.5
1.5
1.5
1.5
14
9
16
7
8
ns
ns
Unit
ns
t
PZH
t
PZL
Output Enable Time,
OE
to Yx
t
PHZ
t
PLZ
Output Disable Time,
OE
to Yx
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
5
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