Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
| 参数名称 | 属性值 |
| 厂商名称 | Diodes Incorporated |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| 配置 | SINGLE |
| FET 技术 | JUNCTION |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | MATTE TIN |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管元件材料 | SILICON |
| FMMJ202TA | FMMJ203TA | FMMJ204TA | |
|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown |
| 配置 | SINGLE | SINGLE | SINGLE |
| FET 技术 | JUNCTION | JUNCTION | JUNCTION |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子面层 | MATTE TIN | MATTE TIN | MATTE TIN |
| 端子形式 | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| 厂商名称 | Diodes Incorporated | Diodes Incorporated | - |
| Base Number Matches | - | 1 | 1 |
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