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BT151B-500R

产品描述Silicon Controlled Rectifier, 12 A, 500 V, SCR, PLASTIC, SOT-404, 3 PIN
产品类别模拟混合信号IC    触发装置   
文件大小41KB,共6页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
下载文档 详细参数 选型对比 全文预览

BT151B-500R概述

Silicon Controlled Rectifier, 12 A, 500 V, SCR, PLASTIC, SOT-404, 3 PIN

BT151B-500R规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称NXP(恩智浦)
零件包装代码SOT
包装说明SMALL OUTLINE, R-PSSO-G2
针数3
制造商包装代码SOT404
Reach Compliance Codeunknown
外壳连接ANODE
标称电路换相断开时间70 µs
配置SINGLE
关态电压最小值的临界上升速率50 V/us
最大直流栅极触发电流15 mA
最大直流栅极触发电压1.5 V
最大维持电流20 mA
JESD-30 代码R-PSSO-G2
最大漏电流0.5 mA
通态非重复峰值电流100 A
元件数量1
端子数量2
最大通态电流7500 A
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
最大均方根通态电流12 A
重复峰值关态漏电流最大值500 µA
断态重复峰值电压500 V
重复峰值反向电压500 V
表面贴装YES
端子形式GULL WING
端子位置SINGLE
触发设备类型SCR

文档预览

下载PDF文档
Philips Semiconductors
Product specification
Thyristors
BT151B series
GENERAL DESCRIPTION
Passivated thyristors in a plastic
envelope, suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT151B-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500R
500
7.5
12
100
650R
650
7.5
12
100
800R
800
7.5
12
100
V
A
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
mb
SYMBOL
a
2
1
3
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
mb
109 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -650R -800R
500
1
650
1
800
7.5
12
100
110
50
50
2
5
5
5
0.5
150
125
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 1999
1
Rev 1.200

BT151B-500R相似产品对比

BT151B-500R BT151B-500RT/R BT151B-650RT/R BT151B-800RT/R BT151B-500R/T3 BT151B-650R/T3 BT151B-800R/T3
描述 Silicon Controlled Rectifier, 12 A, 500 V, SCR, PLASTIC, SOT-404, 3 PIN Silicon Controlled Rectifier, 12 A, 500 V, SCR, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 12 A, 650 V, SCR, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 12 A, 800 V, SCR, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 12 A, 500 V, SCR, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 12 A, 650 V, SCR, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 12 A, 800 V, SCR, PLASTIC PACKAGE-3
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
针数 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
外壳连接 ANODE ANODE ANODE ANODE ANODE ANODE ANODE
标称电路换相断开时间 70 µs 70 µs 70 µs 70 µs 70 µs 70 µs 70 µs
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
关态电压最小值的临界上升速率 50 V/us 50 V/us 50 V/us 50 V/us 50 V/us 50 V/us 50 V/us
最大直流栅极触发电流 15 mA 15 mA 15 mA 15 mA 15 mA 15 mA 15 mA
最大直流栅极触发电压 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
最大维持电流 20 mA 20 mA 20 mA 20 mA 20 mA 20 mA 20 mA
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大均方根通态电流 12 A 12 A 12 A 12 A 12 A 12 A 12 A
重复峰值关态漏电流最大值 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA
断态重复峰值电压 500 V 500 V 650 V 800 V 500 V 650 V 800 V
重复峰值反向电压 500 V 500 V 650 V 800 V 500 V 650 V 800 V
表面贴装 YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
触发设备类型 SCR SCR SCR SCR SCR SCR SCR
厂商名称 NXP(恩智浦) - - - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
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