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MBM29LV160TE-12TR: 产品描述1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48; 产品类别存储存储; 文件大小321KB，共59页; 制造商FUJITSU(富士通); 官网地址http://edevice.fujitsu.com/fmd/en/index.html

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MBM29LV160TE-12TR概述

1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48

MBM29LV160TE-12TR规格参数

参数名称	属性值
厂商名称	FUJITSU(富士通)
零件包装代码	TSOP1
包装说明	TSOP1-R,
针数	48
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	120 ns
备用内存宽度	8
启动块	TOP
JESD-30 代码	R-PDSO-G48
长度	18.4 mm
内存密度	16777216 bit
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
端子数量	48
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1-R
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
编程电压	3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
类型	NOR TYPE
宽度	12 mm

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20883-2E

FLASH MEMORY

CMOS

16M (2M

8/1M

16) BIT

MBM29LV160TE/BE

70/90/12

GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

packages. The device is designed to be programmed in-system with the standard system 3.0 V V

supply. 12.0

V V

and 5.0 V V

are not required for write or erase operations. The device can also be reprogrammed in

standard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-

speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),

write enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E

PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the

Embedded Program

TM*

Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

TM*

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

(Continued)

PRODUCT LINE UP

Part No.

= 3.3 V

Ordering Part No.

= 3.0 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

+0.3 V

–0.3 V

+0.6 V

–0.3 V

MBM29LV160TE/160BE

—

120

MBM29LV160TE/BE

-70/90/12

(Continued)

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

comleted, the device internally resets to the read mode.

The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-

bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then

reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset

occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically

reset to the read mode and will have erroneous data stored in the address locations being programmed or

erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-

cessor to read the boot-up firmware from the Flash memory.

Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

* :

Embedded Erase

and Embedded Program

are trademarks of Advanced Micro Devices, Inc.

PACKAGES

48-pin plastic TSOP (I)

Marking Side

48-pin plastic TSOP (I)

Marking Side

(FPT-48P-M19)

(FPT-48P-M20)

48-pin plastic CSOP

48-pin plastic FBGA

(LCC-48P-M03)

(BGA-48P-M11)

MBM29LV160TE-12TR相似产品对比

	MBM29LV160TE-12TR	MBM29LV160BE-12TN	MBM29LV160TE-12PBT	MBM29LV160BE-12TR	MBM29LV160TE-12PCV	MBM29LV160TE-12TN	MBM29LV160BE-12PCV	MBM29LV160BE-12PBT
描述	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48	2MX8 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, TSOP1-48	Flash, 1MX16, 120ns, PBGA48, PLASTIC, FBGA-48	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, CSOP-48	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, TSOP1-48	1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, CSOP-48	1MX16 FLASH 3V PROM, 120ns, PBGA48, PLASTIC, FBGA-48
包装说明	TSOP1-R,	TSOP1, TSSOP48,.8,20	PLASTIC, FBGA-48	TSOP1-R,	VSOC,	TSOP1,	VSOC,	TFBGA,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns
备用内存宽度	8	8	8	8	8	8	8	8
启动块	TOP	BOTTOM	TOP	BOTTOM	TOP	TOP	BOTTOM	BOTTOM
JESD-30 代码	R-PDSO-G48	R-PDSO-G48	R-PBGA-B48	R-PDSO-G48	R-PDSO-C48	R-PDSO-G48	R-PDSO-C48	R-PBGA-B48
长度	18.4 mm	18.4 mm	8 mm	18.4 mm	10 mm	18.4 mm	10 mm	8 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	8	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1
端子数量	48	48	48	48	48	48	48	48
字数	1048576 words	2097152 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	2000000	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	1MX16	2MX8	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1-R	TSOP1	TFBGA	TSOP1-R	VSOC	TSOP1	VSOC	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, VERY THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
编程电压	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1 mm	1.2 mm	1 mm	1.2 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	BALL	GULL WING	C BEND	GULL WING	C BEND	BALL
端子节距	0.5 mm	0.5 mm	0.8 mm	0.5 mm	0.4 mm	0.5 mm	0.4 mm	0.8 mm
端子位置	DUAL	DUAL	BOTTOM	DUAL	DUAL	DUAL	DUAL	BOTTOM
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	12 mm	12 mm	6 mm	12 mm	9.5 mm	12 mm	9.5 mm	6 mm
厂商名称	FUJITSU(富士通)	-	-	-	FUJITSU(富士通)	FUJITSU(富士通)	FUJITSU(富士通)	FUJITSU(富士通)
零件包装代码	TSOP1	TSOP1	-	TSOP1	SOIC	TSOP1	SOIC	BGA
针数	48	48	-	48	48	48	48	48

MBM29LV160TE-12TR

MBM29LV160TE-12TR概述

MBM29LV160TE-12TR规格参数

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