Data Sheet
PT7C5027 series
Crystal Oscillator
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Features
•
•
Wide range of operating supply voltage: 1.50V to
5.0V
Regulated voltage drive oscillator circuit for
reduced power consumption and crystal drive
current
Optimized low crystal drive current oscillation for
miniature crystal units
PT7C5027Axseries: for Flip Chip Bonding
PT7C5027Bxseries: for Wire Bonding (type
Ⅰ)
PT7C5027Cxseries: for Wire Bonding (type
Ⅱ)
Recommended oscillation frequency range
Low frequency version: 20MHz to 60MHz
Multi-stage frequency divider for low-frequency
output support: 0.9MHz(min)
Frequency divider built-in:
Selectable by version: f0, f0/2, f0/4, f0/8, f0/16,
f0/32, f0/64
-40 to 85℃ operating temperature range
Standy function
High impedence in standby mode, oscillator stops
CMOS output duty level(1/2VDD)
50±5% output duty
15pF output drive capability
Die form or Wafer form
PT7C
PT7C
Device Type
Clock Series
XO 5027 Series
5014
5027
A
Description
The PT7C5027 series are miniature crystal
oscillator module ICs. The oscillator circuit stage has
voltage regulator drive, significantly reducing current
consumption and crystal current, compared with
existing devices, and significantly reducing the
oscillator characteristics supply voltage dependency.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Application
•
Used for crystal oscillator
Ordering Information
Part no.
PT7C5027Ax-2WF
PT7C5027Bx-2DE
PT7C5027Bx-2WF
PT7C5027Cx-2DE
PT7C5027Cx-2WF
PT7C5027Cx-5GDE
Package type
Wafer form
Die form
Wafer form
Die form
Wafer form
Die form
Note:
1.Below is the detailed definition of part no.
2. “-2” means die thickness is 220±20µm; “-5G”
means die thickness is 130±15µm.
AL
1
1
Oscillation frequency range,
frequency divider function
Suffix
1
2
3
4
5
6
7
f
out
f
O
f
O
/2
f
O
/4
f
O
/8
f
O
/16
f
O
/32
f
O
/64
Frequency range
Pad layout type
A: for Flip Chip Bonding
B: for Wire Bonding(type I)
C: for Wire Bonding(type II)
20 to 60MHz
PT0276(08/07)
1
Ver:0
Data Sheet
PT7C5027 series
Crystal Oscillator
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Series Configuration
Part No.
Output
frequency
Operating
supply
voltage
range(V)
Oscillation
mode
Recommended
oscillation
frequency
ragne
*1
(MHz)
Output drive
capability(mA)
Standby mode
Oscillator
Output
stop
state
function
PT7C5027x1
*2
f0
*2
PT7C5027x2
*2
f0/2
PT7C5027x3
*2
f0/4
1.50 to5.0
Fundamental
20 to 60
4
Yes
Hi-Z
PT7C5027x4
*2
f0/8
*2
PT7C5027x5
f0/16
*2
PT7C5027x6
f0/32
*2
PT7C5027x7
f0/64
Note1:
The recommended operating frequency is a yardstick value derived from the crystal used for PTI characteristics
authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to
crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
Note2;
“x” means A, B or C of different Pad layout type.
Block Diagram
PT0276(08/07)
2
Ver:0
Data Sheet
PT7C5027 series
Crystal Oscillator
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Pad Configuration
Sensor
Sensor
Sensor
1
GND
Q
6
1
VDD
Q
6
1
Q
GND
6
2
INHN
VDD
5
2
INHN
GND
5
2
VDD
INHN
5
XT
XTN
XT
XTN
XTN
XT
3
4
PT7C5027Ax
3
4
3
4
PT7C5027Cx
PT7C5027Bx
Pad Name
X Coordinate
Pad Coordinate File
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
sensor
-50
750.00
4
499.00
76.50
1
80.60
620.20
5
589.40
349.20
2
80.60
349.20
6
589.40
620.20
3
176.60
76.50
Note:
Substrate is connected to GND for 130µm die thickness; floating for 220µm die thickness.
Die Size:
770µm*800µm (Including scribe line size 100µm*100µm.)
Die Thickness:
PT7C5027Ax-2WF/Bx-2DE/Bx-2WF/Cx-2DE/Cx-2WF is 220±20µm; PT7C5027Cx-
5GDE is 130µm±15µm
Pad Size:
90µm*90µm
Pad Description
Sym.
XTN
XT
INHN
VDD
GND
Q
Type
O
I
I
P
P
O
Amplifier output.
Description
Crystal oscillator connected between XT and XTN
Amplifier input.
Output state control input. High impedance when LOW. Power-saving pull-up resistor built
in.
Supply voltage
Ground
Output. Output frequency determined by internal circuit to one of
f0,f0/2,f0/4,f0/8,f0/16,f0/32,f0/64
PT0276(08/07)
3
Ver:0
Data Sheet
PT7C5027 series
Crystal Oscillator
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Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
fo output frequency
High impedance
Oscillator
Normal operation
Stopped
Power-saving Pull-up Resistor
The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level(HIGH or LOW). When INHN is tied
LOW level, the pull-up resistance is large(RUP1),reducing the current consumed by the resistance. When INHN is left open
circuit, the pull-up resistance is small(RUP2),which increases the input susceptibility to external noise. However, the pull-up
resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output.
Oscillation Detector Function
The PT7C5027 series also feature an oscillation detector circuit. This circuit functions make the outputs disable until the oscillator
circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when
power is applied or when INHN is switched.
Maximum Ratings
Storage Temperature ................................................................................- 65oC to +150oC
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +4.0V
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V
DC Output............................................................... -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................... 20mA
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
(GND=0V, unless otherwise noted.)
Sym
V
DD
V
IN
T
A
f0
f
OUT
Parameter
Supply voltage
Input voltage
Operating temperature
Oscillation frequency*1
Output frequency
Conditions
C
L
≤
15pF
-
-
-
C
L
≤
15pF
Min
1.50
GND
-40
20
0.9
Typ
-
-
-
-
-
Max
5.0
V
DD
+85
60
60
Unit
V
V
°C
MHz
MHz
PT0276(08/07)
4
Ver:0
Data Sheet
PT7C5027 series
Crystal Oscillator
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DC Electrical Characteristics
PT7C5027x1 to PT7C5027x7 (V
DD
= 1.50 to 5.0V, T
A
= -40 to 85°C, unless otherwise noted.)
Sym
V
OH
V
OL
V
IH
V
IL
I
Z
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Condition
Q: Measurement cct3, I
OH
=4mA
Q: Measurement cct3, I
OL
=4mA
INHN, Measurement cct4
INHN, Measurement cct4
V
OH
=V
DD
Q: Measurement cct5,
IHNH=LOW
V
OL
=GND
V
DD
=5.0V
Measurement cct 1,
5027C1(f0),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=48MHz
V
DD
=1.8V
V
DD
=5.0V
Measurement cct 1,
5027C1(f0/2),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=24MHz
V
DD
=1.8V
V
DD
=5.0V
Measurement cct 1,
5027C1(f0/4),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=12MHz
V
DD
=1.8V
V
DD
=5.0V
Measurement cct 1,
5027C1(f0/8),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=6MHz
V
DD
=1.8V
V
DD
=5.0V
Measurement cct 1,
5027C1(f0/16),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=3MHz
V
DD
=1.8V
V
DD
=5.0V
Measurement cct 1,
5027C1(f0/32),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=1.5MHz
V
DD
=1.8V
V
DD
=5.0V
Measurement cct 1,
5027C1(f0/64),no load
V
DD
=3.3V
INHN=open,f0=48MHz V
DD
=2.5V
f
OUT
=0.94MHz
V
DD
=1.8V
Measurement cct1, INHN=LOW
Measurement cct6
-
Design value(a monitor pattern on a
wafer is tested),Excluding parasitic
capacitance
Min
V
DD
-0.4
-
0.7V
DD
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
30
50
4.8
8
Rating
Typ
-
-
-
-
-
-
2.3
1.6
1.3
1.0
2.2
1.5
1.2
0.9
2.0
1.3
1.0
0.8
1.8
1.1
0.9
0.75
1.75
1.05
0.85
0.7
1.7
1.0
0.85
0.7
1.7
1.0
0.85
0.7
-
1.5
70
100
6
10
Max
-
0.4
-
0.3V
DD
10
10
3.2
2.4
2.0
1.5
3.1
2.3
1.8
1.4
2.8
2.0
1.5
1.2
2.5
1.7
1.4
1.15
2.4
1.6
1.3
1.1
2.3
1.5
1.3
1.1
2.3
1.5
1.3
1.1
10
8
150
200
7.2
12
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
MΩ
KΩ
KΩ
pF
pF
I
DD
Current consumption
I
ST
R
UP1
R
UP2
R
f
C
G
C
D
Standby current
INHN pull-up resistance
Oscillator feedback resistance
Oscillator capacitance
PT0276(08/07)
5
Ver:0
嵌入式系统
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