IRS23365DM
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Drives up to six IGBT/MOSFET power devices
Gate drive supplies up to 20 V per channel
Integrated bootstrap functionality
Over-current protection
Over-temperature shutdown input
Advanced input filter
Integrated deadtime protection
Shoot-through (cross-conduction) protection
Undervoltage lockout for V
CC
& V
BS
Enable/disable input and fault reporting
Adjustable fault clear timing
Separate logic and power grounds
3.3 V input logic compatible
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Matched propagation delays for all channels
-40°C to 125°C operating range
RoHS compliant
Lead-Free
Product Summary
Topology
V
OFFSET
V
OUT
I
o+
& I
o-
(typical)
3 Phase
≤ 600 V
10 V – 20 V
180 mA & 380 mA
530 ns & 530 ns
275 ns
t
ON
& t
OFF
(typical)
Deadtime (typical)
Package Options
48-Lead MLPQ7X7
(without 14 leads)
Typical Applications
•
•
•
•
Appliance motor drives
Servo drives
Micro inverter drives
General purpose three phase inverters
Typical Connection Diagram
1
www.irf.com
© 2012 International Rectifier
3 December, 2012
IRS23365DM
Description
The IRS23365DM is a high voltage, high speed, power MOSFET and IGBT gate drivers with three high-side and three low-
side referenced output channels for 3-phase applications. This IC is designed to be used with low-cost bootstrap power
supplies; the bootstrap diode functionality has been integrated into this device to reduce the component count and the PCB
size. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The
floating logic input is compatible with standard CMOS or LSTTL outputs (down to 3.3 V logic). A current trip function which
terminates all six outputs can be derived from an external current sense resistor. Enable functionality is available to terminate
all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that a fault (e.g., over-current, over-
temperature, or undervoltage shutdown event) has occurred. Fault conditions are cleared automatically after a delay
programmed externally via an RC network connected to the RCIN input. The output drivers feature a high-pulse current
buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum deadtime
circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVIC’s use in high frequency
applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration,
which operate up to 600 V.
Simplified Block Diagram
2
www.irf.com
© 2012 International Rectifier
3 December, 2012
IRS23365DM
Typical Application Diagram
+
DC Bus
≤
600 V
Input
Voltage
To
Load
-
IRS2336xD
V
CC
Control Inputs,
EN, & FAULT
Qualification Information
†
Industrial
Qualification Level
††
Comments: This family of ICs has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by
extension of the higher Industrial level.
MLPQ7X7
MSL3 , 260°C
(per IPC/JEDEC J-STD-020)
†††
Moisture Sensitivity Level
Human Body Model
ESD
Machine Model
Charged Device Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
††††
††††
Class 1B
(per JEDEC standard JESD22-A114)
Class B
(per EIA/JEDEC standard EIA/JESD22-A115)
Class IV
(per JEDEC standard JESD22-C101)
Class I, Level A
(per JESD78)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your International
Rectifier sales representative for further information.
Charged Device Model classification is based on SOIC28W package.
3
www.irf.com
© 2012 International Rectifier
3 December, 2012
IRS23365DM
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to V
SS
unless otherwise stated in the table. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Voltage clamps are included between V
CC
& COM (25 V),
V
CC
& V
SS
(25 V), and V
B
& V
S
(25 V).
Definition
Low side supply voltage
Logic input voltage (HIN, LIN, ITRIP, EN)
RCIN input voltage
High-side floating well supply voltage
High-side floating well supply return voltage
Floating gate drive output voltage
Low-side output voltage
Fault output voltage
Power ground
Allowable V
S
offset supply transient relative to V
SS
High-side input pulse width
Package power dissipation @ T
A
≤+25ºC
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min
-0.3
V
SS
-0.3
V
SS
-0.3
-0.3
†
V
B
-25
V
S
-0.3
COM-0.3
V
SS
-0.3
V
CC
-25
—
500
—
—
—
-55
—
Max
25
†
Symbol
V
CC
V
IN
V
RCIN
V
B
V
S
V
HO
V
LO
V
FLT
COM
dV
S
/dt
PW
HIN
P
D
Rth
JA
T
J
T
S
T
L
†
Units
V
SS
+5.2
V
CC
+0.3
†
625
V
B
+0.3
V
B
+0.3
V
CC
+0.3
V
CC
+0.3
V
CC
+0.3
50
—
2.0
63
150
150
300
V
V/ns
ns
W
ºC/W
ºC
All supplies are tested at 25 V. An internal 25 V clamp exists for each supply.
4
www.irf.com
© 2012 International Rectifier
3 December, 2012
IRS23365DM
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to V
SS
unless otherwise stated in the table. The offset rating is tested with supplies of (V
CC
-COM) = (V
B
-
V
S
) = 15 V.
Definition
Min
10
V
SS
V
S
+10
COM-8
-50
V
s
COM
-5
V
SS
V
SS
V
SS
-40
Max
20
V
SS
+5
V
S
+20
600
600
V
B
V
CC
5
V
CC
V
CC
V
SS
+5
125
Units
Symbol
V
CC
V
IN
V
B
V
S
V
S
(t)
V
HO
V
LO
COM
V
FLT
V
RCIN
V
ITRIP
T
A
†
Low-side supply voltage
HIN, LIN, & EN input voltage
High-side floating well supply voltage
†
High-side floating well supply offset voltage
††
Transient high-side floating supply voltage
Floating gate drive output voltage
Low-side output voltage
Power ground
FAULT output voltage
RCIN input voltage
ITRIP input voltage
Ambient temperature
V
ºC
Logic operation for V
S
of –8 V to 600 V. Logic state held for V
S
of –8 V to –V
BS
. Please refer to Design Tip DT97-3 for
more details.
†† Operational for transient negative V
S
of V
SS
- 50 V with a 50 ns pulse width. Guaranteed by design. Refer to the
Application Information section of this datasheet for more details.
5
www.irf.com
© 2012 International Rectifier
3 December, 2012
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
