Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 0.17 A,
d
iF
/d
t
= 100 A/µs
I
S
= 0.34 A
(Note 2)
0.8
11
3
0.17
1.3
A
V
nS
nC
NOTE:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
BSS123 Rev G(W)
BSS123
Typical Characteristics
1
V
GS
= 10V
6.0V
0.8
I
D
, DRAIN CURRENT (A)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
3.0V
2.5V
1.5
1.4
V
GS
= 2.5V
1.3
1.2
1.1
1
0.9
5
4.5V
0.6
0.4
3.0V
3.5V
4.5V
6.0V
10V
0.2
2.0V
0
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
3.4
R
DS(ON)
, ON-RESISTANCE (OHM)
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
o
I
D
= 170mA
V
GS
= 10V
I
D
= 0.08A
3
2.6
2.2
1.8
1.4
T
A
= 25
o
C
1
0
2
4
6
8
10
T
A
= 125
o
C
125
150
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
1
V
DS
= 10V
I
D
, DRAIN CURRENT (A)
0.8
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
0.1
T
A
= 125
o
C
25
o
C
0.6
0.01
-55
o
C
0.4
T
A
= 125 C
0.2
25
o
C
-55
o
C
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
o
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
BSS123 Rev G(W)
BSS123
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 0.17A
V
DS
= 30V
50V
100
f = 1 MHz
V
GS
= 0 V
80
CAPACITANCE (pF)
8
70V
C
ISS
6
60
4
40
2
20
C
OSS
C
RSS
0
0
0.4
0.8
1.2
1.6
2
Q
g
, GATE CHARGE (nC)
0
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1
R
DS(ON)
LIMIT
1ms
I
D
, DRAIN CURRENT (A)
10ms
100ms
1s
10s
DC
0.01
V
GS
= 10V
SINGLE PULSE
R
θJA
= 350
o
C/W
T
A
= 25 C
0.001
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
5
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 350°C/W
T
A
= 25°C
100µs
4
0.1
3
2
1
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 350 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
BSS123 Rev G(W)
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not intended to be an exhaustive list of all such trademarks.
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
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