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SI9955DYD84Z

产品描述Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
产品类别分立半导体    晶体管   
文件大小418KB,共6页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 选型对比 全文预览

SI9955DYD84Z概述

Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SI9955DYD84Z规格参数

参数名称属性值
厂商名称Fairchild
零件包装代码SOT
包装说明SMALL OUTLINE, R-PDSO-G8
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压50 V
最大漏极电流 (ID)3 A
最大漏源导通电阻0.13 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-G8
元件数量2
端子数量8
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)10 A
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

文档预览

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Si9955DY
June 1999
Si9955DY*
Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
•
•
•
3.0 A, 50 V. R
DS(ON)
= 0.130
@ V
GS
= 10 V
R
DS(ON)
= 0.200
@ V
GS
= 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
•
Battery switch
•
Load switch
•
Motor controls
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Si9955DY Rev. A
©1999
Fairchild Semiconductor Corporation

SI9955DYD84Z相似产品对比

SI9955DYD84Z SI9955DYL86Z SI9955DY_NL SI9955DYF011
描述 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8 Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
零件包装代码 SOT SOT SOT SOT
包装说明 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
针数 8 8 8 8
Reach Compliance Code unknown unknown compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压 50 V 50 V 50 V 50 V
最大漏极电流 (ID) 3 A 3 A 3 A 3 A
最大漏源导通电阻 0.13 Ω 0.13 Ω 0.13 Ω 0.13 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
元件数量 2 2 2 2
端子数量 8 8 8 8
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 10 A 10 A 10 A 10 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
厂商名称 Fairchild - Fairchild Fairchild

 
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