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SB2202-Q-TN3-R: 产品描述Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN; 产品类别分立半导体晶体管; 文件大小55KB，共4页; 制造商UNISONIC TECHNOLOGIES CO.,LTD; 官网地址http://www.unisonic.com.tw/

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SB2202-Q-TN3-R概述

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN

SB2202-Q-TN3-R规格参数

参数名称	属性值
厂商名称	UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	4
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	3 A
集电极-发射极最大电压	30 V
配置	SINGLE
最小直流电流增益 (hFE)	100
JEDEC-95代码	TO-252
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	80 MHz

SB2202-Q-TN3-R相似产品对比

	SB2202-Q-TN3-R	SB2202-E-TN3-R	SB2202-P-TN3-T	SB2202-E-TN3-T	SB2202-Q-TN3-T	SB2202-P-TN3-R
描述	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, TO-252, 3 PIN
厂商名称	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
零件包装代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	4	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	3 A	3 A	3 A	3 A	3 A	3 A
集电极-发射极最大电压	30 V	30 V	30 V	30 V	30 V	30 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	100	200	160	200	100	160
JEDEC-95代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz

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