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SS5P3-G3/87A

产品描述DIODE 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode
产品类别分立半导体    二极管   
文件大小106KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 全文预览

SS5P3-G3/87A概述

DIODE 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier Diode

SS5P3-G3/87A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码TO-277
包装说明R-PDSO-F3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.45 V
JEDEC-95代码TO-277A
JESD-30 代码R-PDSO-F3
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压30 V
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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New Product
SS5P3 & SS5P4
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP
TM
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
1
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 5.0 A
T
J
max.
5.0 A
30 V, 40 V
150 A
20 mJ
0.403 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 2 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
T
J,
T
STG
SYMBOL
SS5P3
S53
30
5.0
150
20
- 55 to + 150
SS5P4
S54
40
V
A
A
mJ
°C
UNIT
Document Number: 88982
Revision: 29-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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