SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996
FEATURES:
* V
DS
- 200V
* R
DS(ON)
- 10Ω
7
ZVN2120G
D
PARTMARKING DETAIL - ZVN2120
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
200
320
2
±
20
2
-55 to +150
UNIT
V
mA
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
SYMBOL MIN.
BV
DSS
200
1
3
20
10
100
500
10
100
85
20
7
8
8
20
12
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=250mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=200V, V
GS
=0V
V
DS
=160V, V
GS
=0V,
T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=250mA
V
DS
=25V, I
D
=250mA
Gate-Source Threshold Voltage V
GS(th)
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
I
GSS
I
DSS
I
D(on)
R
DS(on)
Forward Transconductance(1)(2) g
fs
Input Capacitance (2)
Common Source Output
Capacitance (2)
C
iss
C
oss
Reverse Transfer Capacitance (2) C
rss
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 390
ZVN2120G
TYPICAL CHARACTERISTICS
I
D(on)
-On-State Drain Current (Amps)
V
GS=
10V
8V
7V
6V
5V
I
D(on)
-On-State Drain Current (Amps)
2.0
1.4
1.2
10V
V
GS=
8V
7V
6V
5V
4V
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
0.8
4V
0.4
3V
2V
0
10
20
30
40
50
3V
0
2V
10
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
I
D(On)
-On-State Drain Current (Amps)
V
DS-
Drain Source
Voltage (Volts)
20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
V
DS=
25V
16
12
I
D=
1.0A
10V
8
4
0.5A
0
0
2
4
6
8
0.1A
10
10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
R
DS(ON)
-Drain Source Resistance
(Ω)
100
2.4
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
Gate Th
re
10
I
D=
1.0A
0.5A
0.1A
Dr
c
ur
So
n-
ai
ist
es
eR
c
an
D
eR
S(
)
on
V
GS=
10V
I
D=
250mA
shold V
oltage V
V
GS=
V
DS
I
D=
1mA
GS(TH)
1
1
2
3
4
5 6 7 8 9 10
20
20 40 60 80 100 120 140 160 180
V
GS
-Gate Source Voltage
(Volts)
T
j
-Junction Temperature (°C)
On-resistance vs gate-source voltage
Normalised R
DS(on)
and V
GS(th)
v Temperature
3 - 391
ZVN2120G
TYPICAL CHARACTERISTICS
500
500
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
400
300
200
100
V
DS=
25V
400
300
200
100
0
0
2
4
6
8
10
V
DS=
25V
0
0
0.2
0.4
0.6
0.8 1.0
1.2
1.4
1.6
1.8 2.0
I
D(on)
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
16
V
GS
-Gate Source Voltage (Volts)
100
80
60
40
20
C
oss
C
rss
0
10
20
30
40
50
C
iss
14
12
10
8
6
4
2
0
I
D=
700mA
V
DS
=
50V
100V
150V
C-Capacitance (pF)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 392
stm32/stm8
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