BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
Rev. 03 — 17 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
1.3 Applications
Automotive and general purpose
power switching
Fan control
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 2; [1]
see
Figure 3
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C; V
GS
> 10 V
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
I
F
= 250 µA; T
j
= 25 °C
Min
-
-
Typ
-
-
Max
75
114
Unit
V
A
Static characteristics
R
DSon
I
D
/I
sense
S
F(TSD)
V
F(TSD)
drain-source on-state
resistance
ratio of drain current to
sense current
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
[1]
-
450
-1.4
648
8.8
500
-1.54
658
10
550
-1.68
668
mΩ
mV/K
mV
Current is limited by power dissipation chip rating.
NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
mb
Pinning information
Symbol
G
ISENSE
A
D
K
KS
S
D
Description
gate
sense current
anode
drain
cathode
Kelvin source
source
mounting base; connected to
drain
g
Simplified outline
mb
Graphic symbol
d
a
4
123 567
SOT427
(D2PAK)
MBL362
Isense
s
k
Kelvin source
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BUK7C10-75AITE D2PAK
plastic single-ended surface-mounted package (D2PAK); 7 leads
(one lead cropped)
Version
SOT427
BUK7C10-75AITE_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 17 February 2009
2 of 15
NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2
I
DM
P
tot
I
GS(CL)
peak drain current
total power dissipation
gate-source clamping
current
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
continuous
pulsed; t
p
= 5 ms;
δ
= 0.01
[1]
[2]
[2]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
-
-20
-
-
-
-
-
-
-
-100
Max
75
75
20
114
75
75
456
272
10
50
100
Unit
V
V
V
A
A
A
A
W
mA
mA
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
V
isol(FET-TSD)
FET to temperature
sense diode isolation
voltage
T
stg
T
j
I
S
I
SM
E
DS(AL)S
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
[1]
[2]
Avalanche ruggedness
non-repetitive
I
D
= 75 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
electrostatic discharge
voltage
[1]
[2]
-55
-55
-
-
-
-
175
175
114
75
456
739
°C
°C
A
A
A
mJ
Source-drain diode
Electrostatic discharge
V
esd
HBM; C = 100 pF; R = 1.5 kΩ
-
6
kV
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7C10-75AITE_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 17 February 2009
3 of 15
NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
120
P
der
(%)
80
03na19
120
ID
(A)
03ni93
80
Capped at 75 A due to package
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
200
Tmb (°C)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
tp = 10
μs
102
100
μs
03ni94
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7C10-75AITE_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 17 February 2009
4 of 15
NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
mounted on printed-circuit board;
minimum footprint
Min
-
-
Typ
-
-
Max
50
0.55
Unit
K/W
K/W
thermal resistance from
see
Figure 4
junction to mounting base
1
Z
th(j-mb)
(K/W)
03ni64
δ
= 0.5
10-1
0.2
0.1
0.05
0.02
10-2
P
δ
=
tp
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7C10-75AITE_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 17 February 2009
5 of 15
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