DATASHEET
HCTS86MS
Radiation Hardened Quad 2-Input Exclusive OR Gate
FN2249
Rev 2.00
October 1995
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x
10
12
RAD
(Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii
5A at VOL, VOH
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
A1 1
B1 2
Y1 3
A2 4
B2 5
Y2 6
GND 7
14 VCC
13 B4
12 A4
11 Y4
10 B3
9 A3
8 Y3
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
Y1
A2
B2
Y2
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
B4
A4
Y4
B3
A3
Y3
Description
The Intersil HCTS86MS is a Radiation Hardened Quad
2-Input Exclusive OR Gate. A high on any one input exclu-
sively will change the output to a High state.
The HCTS86MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS86MS is supplied in a 14 lead Ceramic flat-
pack (K suffix) or a SBDIP Package (D suffix).
Functional Diagram
An
(1, 4, 9, 12)
Yn
(3, 6, 8, 11)
Ordering Information
PART
NUMBER
HCTS86DMSR
TEMPERATURE
RANGE
-55
o
C to +125
o
C
o
C
Bn
SCREENING
LEVEL
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
(2, 5, 10, 13)
PACKAGE
14 Lead SBDIP
TRUTH TABLE
INPUTS
14 Lead Ceramic
Flatpack
14 Lead SBDIP
An
L
L
Bn
L
H
L
H
OUTPUTS
Yn
L
H
H
L
HCTS86KMSR
-55
to
+125
o
C
HCTS86D/
Sample
HCTS86K/
Sample
HCTS86HMSR
+25
o
C
o
+25 C
+25
o
C
Sample
14 Lead Ceramic
Flatpack
Die
H
H
Die
NOTE: L = Logic Level Low, H = Logic level High
FN2249 Rev 2.00
October 1995
Page 1 of 8
HCTS86MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
10mA
DC Drain Current, Any One Output
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
JA
JC
o
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74 C/W
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
30
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Rise and Fall Times at VCC = 4.5 (TR, TF). . . . . 100ns/V Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50A, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50A, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50A, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50A, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
10
200
-
-
-
-
0.1
UNITS
A
A
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
-
V
1
2, 3
0.5
5.0
-
A
A
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages reference to device GND.
2. For functional tests VO
4.0V
is recognized as a logic “1”, and VO
0.5V
is recognized as a logic “0”.
FN2249 Rev 2.00
October 1995
Page 2 of 8
HCTS86MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
GROUP
A SUB-
GROUPS
9
10, 11
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TTHL
TTLH
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
36
51
10
10
15
1
UNITS
pF
pF
pF
pF
ns
ns
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
MAX
18
20
20
22
UNITS
ns
ns
ns
ns
PARAMETER
Input to Output
SYMBOL
TPHL
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
-
VCC
-0.1
-
-
2
2
MAX
0.2
-
-
0.1
-
5
-
20
22
UNITS
mA
mA
mA
V
V
A
-
ns
ns
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
Input to Output
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
FN
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V , IOL = 50A
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50A
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
VCC = 4.5V
VCC = 4.5V
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
4.0V
is recognized as a logic “1”, and VO
0.5V
is recognized as a logic “0”.
FN2249 Rev 2.00
October 1995
Page 3 of 8
HCTS86MS
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
3A
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
Subgroup B-6
Group D
NOTES:
Sample/5005
Sample/5005
1, 7, 9
1, 7, 9
1. Alternate group A testing in accordance with method 5005 of MIL-STD-883 may be excercised.
2. Table 5 parameters only.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
3, 6, 8, 11
1, 2, 4, 5, 7, 9, 10,
12, 13
-
14
-
-
FN2249 Rev 2.00
October 1995
Page 4 of 8
HCTS86MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
50kHz
25kHz
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
3, 6, 8, 11
7
-
1, 2, 4, 5, 9, 10, 12,
13, 14
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
7
3, 6, 8, 11
14
1, 2, 4, 5, 9, 10,
12, 13
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10k
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1K
5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
3, 6, 8, 11
GROUND
7
VCC = 5V
0.5V
1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
FN2249 Rev 2.00
October 1995
Page 5 of 8
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