电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MT47H64M8HR-3AIT:G

产品描述DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84
产品类别存储    存储   
文件大小2MB,共129页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT47H64M8HR-3AIT:G概述

DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84

MT47H64M8HR-3AIT:G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明TFBGA,
针数84
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间0.45 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B84
长度12.5 mm
内存密度536870912 bit
内存集成电路类型DDR DRAM
内存宽度8
功能数量1
端口数量1
端子数量84
字数67108864 words
字数代码64000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织64MX8
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
宽度8 mm

文档预览

下载PDF文档
Micron Confidential and Proprietary
512Mb: x8, x16 Automotive DDR2 SDRAM
Features
Automotive DDR2 SDRAM
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
Features
Industrial and automotive temperature compliant
V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
32ms, 8192-cycle refresh
On-die termination (ODT)
RoHS-compliant
Supports JEDEC clock jitter specification
AEC-Q100
PPAP submisson
8D response time
Options
1
• Configuration
– 64 Meg x 8 (16 Meg x 8 x 4 banks)
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
• FBGA package (Pb-free) – x8
– 60-ball FBGA (8mm x 10mm)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm)
• FBGA package (lead solder) – x8
– 60-ball FBGA (8mm x 10mm)
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm)
• Timing – cycle time
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Industrial (–40°C T
C
+95°C;
–40°C T
A
+85°C)
– Automotive (–40°C T
C
, T
A
+105ºC)
• Revision
Note:
Marking
64M8
32M16
CF
HR
JN
HW
-25E
-3
None
L
AIT
AAT
:G
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed Grade
-25E
-25
-3E
-3
CL = 3
400
400
400
400
CL = 4
533
533
667
533
CL = 5
800
667
667
667
CL = 6
800
800
n/a
n/a
CL = 7
n/a
n/a
n/a
n/a
t
RC
(ns)
55
55
54
55
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹
2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 515  278  1320  1350  2457  58  3  29  53  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved