SRAM Module, 256KX16, 35ns, CMOS
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 35 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDMA-T48 |
| JESD-609代码 | e0 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端子数量 | 48 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIP |
| 封装等效代码 | DIP48,.9 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.48 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 2.4 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| IDT7M4016S35C | IDT7M4016S55CB | IDT7M4016S55C | IDT7M4016S25C | 2SK1486 | IDT7M4016S35CB | IDT7M4016S70CB | IDT7M4016S45C | |
|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 256KX16, 35ns, CMOS | SRAM Module, 256KX16, 55ns, CMOS | SRAM Module, 256KX16, 55ns, CMOS | SRAM Module, 256KX16, 25ns, CMOS | Drain Current –ID=32A@ TC=25C | SRAM Module, 256KX16, 35ns, CMOS | SRAM Module, 256KX16, 70ns, CMOS | SRAM Module, 256KX16, 45ns, CMOS |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | - | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A991.B.2.A | 3A001.A.2.C | 3A991.B.2.A | 3A991.B.2.A | - | 3A001.A.2.C | 3A001.A.2.C | 3A991.B.2.A |
| 最长访问时间 | 35 ns | 55 ns | 55 ns | 25 ns | - | 35 ns | 70 ns | 45 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | - | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDMA-T48 | R-XDMA-T48 | R-XDMA-T48 | R-XDMA-T48 | - | R-XDMA-T48 | R-XDMA-T48 | R-XDMA-T48 |
| JESD-609代码 | e0 | e0 | e0 | e0 | - | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | - | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | - | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 16 | 16 | 16 | 16 | - | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 48 | 48 | 48 | 48 | - | 48 | 48 | 48 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | - | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | - | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 125 °C | 70 °C | 70 °C | - | 125 °C | 125 °C | 70 °C |
| 组织 | 256KX16 | 256KX16 | 256KX16 | 256KX16 | - | 256KX16 | 256KX16 | 256KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIP | DIP | DIP | DIP | - | DIP | DIP | DIP |
| 封装等效代码 | DIP48,.9 | DIP48,.9 | DIP48,.9 | DIP48,.9 | - | DIP48,.9 | DIP48,.9 | DIP48,.9 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | - | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 225 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.48 A | 0.48 A | 0.48 A | 0.48 A | - | 0.48 A | 0.48 A | 0.48 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 2.4 mA | 2.56 mA | 2.4 mA | 2.56 mA | - | 2.56 mA | 2.56 mA | 2.4 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | - | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | MILITARY | COMMERCIAL | COMMERCIAL | - | MILITARY | MILITARY | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | - | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 30 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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