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MBRD845-T3-LF

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 45V V(RRM), Silicon, TO-252, DPAK-3/2
产品类别分立半导体    二极管   
文件大小43KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
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MBRD845-T3-LF概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 45V V(RRM), Silicon, TO-252, DPAK-3/2

MBRD845-T3-LF规格参数

参数名称属性值
厂商名称Won-Top Electronics Co., Ltd.
包装说明DPAK-3/2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.55 V
JEDEC-95代码TO-252
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流85 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压45 V
最大反向电流200 µA
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置SINGLE

文档预览

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®
MBRD820/S – MBRD8100/S
8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Surge Current Capability
Low Power Loss, High Efficiency
Ideally Suited for Automatic Assembly
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
D
A
B
C
J
E
PIN 1
2
3
K
H
L
G
P
P
Mechanical Data
Case: DPAK/TO-252, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Device Code, See Page 3
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
Case, PIN 2
(MBRD820 Series)
DPAK/TO-252
Dim
Min
Max
A
B
C
D
E
G
H
J
K
L
P
6.05
5.05
2.25
1.05
5.48
2.55
0.55
0.49
0.95
0.49
6.65
5.55
2.40
1.25
6.08
3.00
0.90
0.55
1.25
0.55
PIN 3
Case, PIN 2
(MBRD820S Series)
2.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
J
R
θJA
R
θJC
T
J
, T
STG
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD
820/S 830/S 840/S 845/S 850/S 860/S 880/S 8100/S
20
14
30
21
40
28
45
32
8.0
85
0.55
0.2
20
450
80
3.0
-55 to +150
350
0.75
0.85
50
35
60
42
80
56
100
70
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 8.0A
@T
J
= 25°C
@T
J
= 100°C
Typical Junction Capacitance (Note 1)
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Case (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
2. Mounted on FR-4 PC board with minimum recommended pad layout.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1

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