RV2C001ZP
Pch -20V -100mA Small Signal MOSFET
lOutline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
lFeatures
-20V
3.8W
-100mA
100mW
VML1006
(3)
(2)
(1)
lInner
circuit
1) Low voltage drive(-1.2V) makes this
device ideal for partable equipment.
2) Drive circuits can be simple.
3) Built-in ESD Protection Diode.
(1) Gate
(2) Source
(3) Drain
*1
BODY DIODE
*2
ESD PROTECTION DIODE
lPackaging
specifications
Packaging
lApplication
Switching
Type
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute
maximum ratings(T
a
= 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D *1
I
D,pulse *2
V
GSS
P
D *3
T
j
T
stg
Value
-20
100
400
10
100
150
-55
to
+150
Unit
V
mA
mA
V
mW
°C
°C
8,000
T2L
RX
Reel size (mm)
Tape width (mm)
Taping
180
8
lThermal
resistance
Values
Parameter
Thermal resistance, junction - ambient
Symbol
Min.
R
thJA *3
-
Typ.
-
Max.
1250
°C/W
Unit
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© 2013 ROHM Co., Ltd. All rights reserved.
1/10
2013.11 - Rev.A
RV2C001ZP
lElectrical
characteristics(T
a
= 25°C)
Values
Parameter
Symbol
Conditions
Min.
Drain - Source breakdown
voltage
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS (th)
V
GS
= 0V, I
D
=
-1mA
V
DS
=
-20V,
V
GS
= 0V
V
GS
=
10V,
V
DS
= 0V
V
DS
=
-10V,
I
D
=
-100mA
V
GS
=
-4.5V,
I
D
=
-100mA
Data Sheet
Unit
Typ.
-
-
-
-
2.5
3.4
4.8
6.0
10.0
3.3
-
Max.
-
-1
10
-1
3.8
5.1
8.2
13.2
40.0
6.6
-
mS
W
V
mA
mA
V
-20
-
-
-0.3
-
-
-
-
-
-
120
V
GS
=
-2.5V,
I
D
=
-50mA
Static drain - source
on - state resistance
R
DS(on)
*4
V
GS
=
-1.8V,
I
D
=
-20mA
V
GS
=
-1.5V,
I
D
=
-10mA
V
GS
=
-1.2V,
I
D
=
-1mA
V
GS
=
-4.5V,
I
D
=
-100mA,
T
j
=125°C
Transconductance
g
fs *4
V
DS
=
-10V,
I
D
=
-100mA
*1 Limited only by maximum temperature allowed.
*2 Pw
10ms, Duty cycle
1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/10
2013.11 - Rev.A
RV2C001ZP
lElectrical
characteristics(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on) *4
t
r *4
t
d(off)
t
f *4
*4
Data Sheet
Conditions
Min.
V
GS
= 0V
V
DS
=
-10V
f = 1MHz
V
DD
⋍
-10V,
V
GS
=
-4.5V
Unit
Typ.
15.0
4.0
1.5
46
62
325
137
Max.
-
-
-
-
-
ns
-
-
pF
-
-
-
-
-
-
-
I
D
=
-50mA
R
L
= 200W
R
G
= 10W
lBody
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Values
Parameter
Continuous source current
Pulsed source current
Forward voltage
Symbol
I
S *1
I
SM
V
SD
*2
*4
Conditions
Min.
-
T
a
= 25°C
-
V
GS
= 0V, I
s
=
-100mA
-
-
-
Typ.
-
Max.
-80
-400
-1.2
Unit
mA
mA
V
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3/10
2013.11 - Rev.A
RV2C001ZP
lElectrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Drain Current Derating Curve
1.2
1
Power Dissipation : P
D
/P
D
max. [%]
100
Drain Current Dissipation
: I
D
/I
D
max. (%)
80
60
40
20
0
0
50
100
150
200
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
125
150
Junction Temperature : T
j
[°C]
Junction Temperature : T
j
[°C]
Fig.3 Typical Output Characteristics(I)
0.1
V
GS
=
-4.5V
V
GS
=
-4.0V
0.08
V
GS
=
-2.5V
Fig.4 Typical Output Characteristics(II)
0.1
V
GS
=
-4.5V
V
GS
=
-4.0V
V
GS
=
-1.5V
T
a
=25ºC
Pulsed
0.08
Drain Current : -I
D
[A]
Drain Current : -I
D
[A]
0.06
V
GS
=
-1.5V
V
GS
=
-2.5V
0.06
V
GS
=
-1.8V
0.04
0.04
V
GS
=
-1.8V
T
a
=25ºC
Pulsed
V
GS
=
-1.2V
0.02
0.02
V
GS
=
-1.2V
0
0
0.2
0.4
0.6
0.8
1
0
0
2
4
6
8
10
Drain - Source Voltage : -V
DS
[V]
Drain - Source Voltage : -V
DS
[V]
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4/10
2013.11 - Rev.A
RV2C001ZP
lElectrical
characteristic curves
Data Sheet
Fig.5 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : -V
(BR)DSS
[V]
50
V
GS
= 0V
I
D
=
-1mA
Pulsed
Fig.6 Typical Transfer Characteristics
1
V
DS
=
-10V
40
Drain Current : -I
D
[A]
0.1
30
20
0.01
T
a
=125ºC
T
a
=75ºC
T
a
=25ºC
T
a
=
-25ºC
10
0
-50
0
50
100
150
0.001
0
0.5
1
1.5
2
2.5
Junction Temperature : T
j
[°C]
Gate - Source Voltage : -V
GS
[V]
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
1.5
V
DS
=
-10V
I
D
=
-100mA
Pulsed
Fig.8 Transconductance vs. Drain Current
1
V
DS
=
-10V
Gate Threshold Voltage : -V
GS(th)
[V]
1.2
0.9
Transconductance : g
fs
[S]
0.1
0.6
T
a
=
-25ºC
T
a
=25ºC
T
a
=75ºC
T
a
=125ºC
0.3
0
-50
0
50
100
150
0.01
0.01
0.1
1
Junction Temperature : T
j
[°C]
Drain Current : -I
D
[A]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/10
2013.11 - Rev.A
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