Datasheet> 器件分类 > 存储> 存储> MX29F800BRC-12

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MX29F800BRC-12: 产品描述Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48; 产品类别存储存储; 文件大小37KB，共4页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx

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MX29F800BRC-12概述

Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48

MX29F800BRC-12规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Macronix
零件包装代码	TSOP
包装说明	TSOP1-R,
针数	48
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	120 ns
备用内存宽度	8
启动块	BOTTOM
JESD-30 代码	R-PDSO-G48
JESD-609代码	e0
长度	18.4 mm
内存密度	8388608 bit
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
端子数量	48
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
组织	512KX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1-R
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
编程电压	5 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
端子面层	TIN LEAD
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
类型	NOR TYPE
宽度	12 mm

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INDEX

ADVANCED INFORMATION

MX29F800T/B

8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

FEATURES

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 5.0V only operation for read, erase and program

operation

• Fast access time: 70/90/120ns

• Low power consumption

- 30mA maximum active current

- 1uA typical standby current

• Command register architecture

- Byte/word Programming (7us/14us typical)

- Block Erase (Block structure 16K-Bytex1, 8K-Bytex2,

32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & block) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from, or

program data to, another sector that is not being erased,

then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and

erase cycle completion.

• Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program or

erase cycle completion.

- Sector protect/unprotect for 5V/12V system.

• Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- 44-pin SOP

- 48-pin TSOP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

GENERAL DESCRIPTION

The MX29F800T/B is a 8-mega bit Flash memory orga-

nized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29F800T/B is packaged in 44-pin SOP, 48-pin

TSOP. It is designed to be reprogrammed and erased in

system or in standard EPROM programmers.

The standard MX29F800T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention, the

MX29F800T/B has separate chip enable (CE) and out-

put enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F800T/B uses a command register to manage this

functionality. The command register allows for 100% TTL

level control inputs and fixed power supply levels during

erase and programming, while maintaining maximum

EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F800T/B uses a 5.0V±10% VCC supply

to perform the High Reliability Erase and auto Program/

Erase algorithms.

The highest degree of latch-up protection is achieved with

MXIC's proprietary non-epi process. Latch-up protec-

tion is proved for stresses up to 100 milliamps on ad-

dress and data pin from -1V to VCC + 1V.

P/N:PM0578

REV. 0.0, SEP. 21, 1998

MX29F800BRC-12相似产品对比

	MX29F800BRC-12	MX29F800TRC-90	MX29F800TRC-70	MX29F800BRC-70	MX29F800BRC-90	MX29F800TRC-12
描述	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, REVERSE, TSOP-48
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP
包装说明	TSOP1-R,	12 X 20 MM, REVERSE, TSOP-48	12 X 20 MM, REVERSE, TSOP-48	TSOP1-R,	TSOP1-R,	TSOP1-R,
针数	48	48	48	48	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	120 ns	90 ns	70 ns	70 ns	90 ns	120 ns
备用内存宽度	8	8	8	8	8	8
启动块	BOTTOM	TOP	TOP	BOTTOM	BOTTOM	TOP
JESD-30 代码	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
JESD-609代码	e0	e0	e0	e0	e0	e0
长度	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
内存密度	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	16	16	16	16	16
功能数量	1	1	1	1	1	1
端子数量	48	48	48	48	48	48
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
组织	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1-R	TSOP1-R	TSOP1-R	TSOP1-R	TSOP1-R	TSOP1-R
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
编程电压	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
厂商名称	Macronix	-	-	Macronix	Macronix	Macronix

MX29F800BRC-12

MX29F800BRC-12概述

MX29F800BRC-12规格参数

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MX29F800BRC-12相似产品对比

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