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1N6383-E3/1

产品描述DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppressor
产品类别分立半导体    二极管   
文件大小56KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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1N6383-E3/1概述

DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppressor

1N6383-E3/1规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
最小击穿电压11.7 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT APPLICABLE
极性BIDIRECTIONAL
最大功率耗散6.5 W
认证状态Not Qualified
最大重复峰值反向电压10 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT APPLICABLE
Base Number Matches1

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ICTE5.0 thru ICTE15C
Series
T
RANS
Z
ORB
®
Transient Voltage Suppressor
Stand Off Voltage
5.0 to 15V
Peak Pulse Power
1500W
Case Style 1.5KE
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 1500W peak pulse power capabililty with a 10/1000µs
waveform, repetition rate (duty cycle): 0.05%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Ideal for data and bus line applications
• High temperature soldering guaranteed:
265
O
C/10 seconds, 0.375” (9.5mm) lead length,
5lbs. (2.3 kg) tension
• Includes 1N6373 thru 1N6385
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
Mechanical Data
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Dimensions in inches and (millimeters)
Case:
Molded plastic body over passivated junction
Terminals:
Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity:
For unidirectional types the color band
denotes the cathode, which is positive with respect
to the anode under normal TVS operation
Mounting Position:
Any
Weight:
0.045oz., 1.2g
Packaging codes/options:
1/1K per Bulk Box, 11K/box
4/1.4K per 13” Reel (52mm Tape), 4.2K/box
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak pulse power dissipation with a 10/1000µs waveform
(Note 1, Fig. 1)
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
Limit
Minimum 1500
See Table 1 & 2
6.5
Unit
W
A
W
Peak pulse current wih a 10/1000µs waveform
(Note 1, Fig 3)
Steady state power dissipation,
T
L
= 75
O
C, at lead lengths 0.375” (9.5mm)
Peak forward surge current, 8.3ms
single half sine-wave superimposed on rated load
for unidirectional only (JEDEC Method)
(Note 2)
Maximum instantaneous forward voltage
at 100A for unidirectional only
Operating junction and storage temperature range
I
FSM
200
A
V
F
T
J
, T
STG
3.5
–55 to +175
V
O
C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum
7/6/00

 
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