EDO DRAM Module, 4MX32, 60ns, CMOS, DIMM-100
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Micron Technology |
| 零件包装代码 | DIMM |
| 包装说明 | DIMM-100 |
| 针数 | 100 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO |
| 最长访问时间 | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDMA-N100 |
| 内存密度 | 134217728 bit |
| 内存集成电路类型 | EDO DRAM MODULE |
| 内存宽度 | 32 |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 100 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 4MX32 |
| 输出特性 | 3-STATE |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIMM |
| 封装等效代码 | DIMM100 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 自我刷新 | NO |
| 最大待机电流 | 0.001 A |
| 最大压摆率 | 0.33 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| MT2LDT432UG-6X | MT4LDT832UG-6X | MT4LDT832UG-5X | MT4LDT832UG-5 | MT2LDT432UG-5 | MT2LDT432UG-5X | MT2LDT432UG-6 | |
|---|---|---|---|---|---|---|---|
| 描述 | EDO DRAM Module, 4MX32, 60ns, CMOS, DIMM-100 | EDO DRAM Module, 8MX32, 60ns, CMOS, DIMM-100 | EDO DRAM Module, 8MX32, 50ns, CMOS, DIMM-100 | Fast Page DRAM Module, 8MX32, 50ns, CMOS, DIMM-100 | Fast Page DRAM Module, 4MX32, 50ns, CMOS, DIMM-100 | EDO DRAM Module, 4MX32, 50ns, CMOS, DIMM-100 | Fast Page DRAM Module, 4MX32, 60ns, CMOS, DIMM-100 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| 零件包装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 包装说明 | DIMM-100 | DIMM-100 | DIMM-100 | DIMM-100 | DIMM-100 | DIMM-100 | DIMM-100 |
| 针数 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE | FAST PAGE | FAST PAGE WITH EDO | FAST PAGE |
| 最长访问时间 | 60 ns | 60 ns | 50 ns | 50 ns | 50 ns | 50 ns | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDMA-N100 | R-XDMA-N100 | R-XDMA-N100 | R-XDMA-N100 | R-XDMA-N100 | R-XDMA-N100 | R-XDMA-N100 |
| 内存密度 | 134217728 bit | 268435456 bit | 268435456 bit | 268435456 bit | 134217728 bit | 134217728 bit | 134217728 bit |
| 内存集成电路类型 | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | EDO DRAM MODULE | FAST PAGE DRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| 字数 | 4194304 words | 8388608 words | 8388608 words | 8388608 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 8000000 | 8000000 | 8000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 4MX32 | 8MX32 | 8MX32 | 8MX32 | 4MX32 | 4MX32 | 4MX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 封装等效代码 | DIMM100 | DIMM100 | DIMM100 | DIMM100 | DIMM100 | DIMM100 | DIMM100 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 自我刷新 | NO | NO | NO | NO | NO | NO | NO |
| 最大待机电流 | 0.001 A | 0.002 A | 0.002 A | 0.002 A | 0.001 A | 0.001 A | 0.001 A |
| 最大压摆率 | 0.33 mA | 0.332 mA | 0.352 mA | 0.352 mA | 0.35 mA | 0.35 mA | 0.33 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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