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MBRS260T3

产品描述2A, 60V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 403A-03, SMB, 2 PIN
产品类别分立半导体    二极管   
文件大小820KB,共5页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
标准  
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MBRS260T3概述

2A, 60V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 403A-03, SMB, 2 PIN

MBRS260T3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证不符合
厂商名称Rochester Electronics
包装说明PLASTIC, CASE 403A-03, SMB, 2 PIN
针数2
制造商包装代码CASE 403A-03
Reach Compliance Codeunknown
其他特性FREE WHEELING DIODE
应用POWER
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-C2
JESD-609代码e0
湿度敏感等级NOT SPECIFIED
最大非重复峰值正向电流60 A
元件数量1
相数1
端子数量2
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
认证状态COMMERCIAL
最大重复峰值反向电压60 V
表面贴装YES
技术SCHOTTKY
端子面层TIN LEAD
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

MBRS260T3文档预览

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MBRS260T3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Over−Voltage Protection
Low Forward Voltage Drop
Pb−Free Package is Available
Mechanical Characteristics
SMB
CASE 403A
PLASTIC
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
L
= 95°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
Value
60
Unit
V
MARKING DIAGRAM
AYWW
B26G
G
B26
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
SMB
SMB
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
2.0
60
A
A
MBRS260T3
MBRS260T3G
T
stg
T
J
dv/dt
−55
to +150
−55
to +125
10,000
°C
°C
V/ms
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2010
May, 2010
Rev. 5
1
Publication Order Number:
MBRS260T3/D
MBRS260T3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R
qJL
R
qJA
v
F
(i
F
= 1.0 A)
(i
F
= 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(V
R
= 60 V)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width
250
ms,
Duty Cycle
2.0%.
I
R
T
J
= 25°C
0.51
0.63
T
J
= 25°C
0.2
Value
24
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
T
J
= 125°C
0.475
0.55
T
J
= 125°C
20
mA
V
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
75°C
125°C
25°C
10
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
125°C
75°C
25°C
1
1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−02
I
R
, REVERSE CURRENT (AMPS)
125°C
100
25°C
f = 1 MHz
C, CAPACITANCE (pF)
20
30
40
50
60
10
1.0E−03
1.0E−04
1.0E−05
25°C
1.0E−06
1.0E−07
75°C
0
10
0
10
20
30
40
50
60
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
http://onsemi.com
2
MBRS260T3
P
FO
, AVERAGE POWER DISSIPATION (W)
I
F
, AVERAGE FORWARD CURRENT (A)
3.5
3
2.5
2
1.5
1
0.5
0
60
70
80
90
100
110
120
130
SQUARE WAVE
dc
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
SQUARE WAVE
dc
0
0.5
1
1.5
2
2.5
3
T
L
, LEAD TEMPERATURE (°C)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Junction to Lead
R
T
, TRANSIENT THERMAL RESISTANCE (NORMALIZED) R
T
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 6. Forward Power Dissipation
1.0E+00
50%
20%
1.0E−01 10%
5.0%
1.0E−02 2.0%
1.0%
R
tjl(t)
= R
tjl*r(t)
1.0E−03
1.0E−04
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 7. Thermal Response
Junction to Case
1.0E+00
50%
20%
10%
5.0%
1.0E−01
1.0E−02 2.0%
1.0E−03 1.0%
R
tjl(t)
= R
tjl*r(t)
1.0E−04
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 8. Thermal Response
Junction to Ambient
http://onsemi.com
3
MBRS260T3
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE G
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MBRS260T3/D

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