DATASHEET
HCS161MS
Radiation Hardened Synchronous Counter
FN2469
Rev 2.00
September 1995
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
MR
CP
P0
P1
P2
P3
PE
GND
1
2
3
4
5
6
7
8
16 VCC
15 TC
14 Q0
13 Q1
12 Q2
11 Q3
10 TE
9 SPEN
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity 2 x 10
-9
Error/Bit Day
(Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
• Input Current Levels Ii
5A at VOL, VOH
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
MR
CP
P0
P1
P2
P3
PE
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
TC
Q0
Q1
Q2
Q3
TE
SPE
Description
The Intersil HCS161MS is a Radiation Hardened 4-Input
Binary; synchronous counter featuring asynchronous reset
and look-ahead carry logic. The HCS161 has an active-low
master reset to zero, MR. A low level at the synchronous
parallel enable, SPE, disables counting and allows data at
the preset inputs (p0 - p3) to load the counter. The data is
latched to the outputs on the positive edge of the clock input,
CP. The HCS161MS has two count output, IC. The terminal
count output indicates a maximum count for one clock pulse
and is used to enable the next cascaded stage to count.
The HCS161MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS161MS is supplied in a 16 lead Ceramic
flatpack (K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
HCS161DMSR
HCS161KMSR
HCS161D/Sample
HCS161K/Sample
HCS161HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
DB NA
FN2469 Rev 2.00
September 1995
Page 1 of 9
HCS161MS
Functional Diagram
3
VCC
P0
16
P1
4
5
P2
P3
6
PE
7
TE
10
GND
8
SPE
9
T
FF0
SPE
R
D
CP
2
MR
1
R
CL
Q
T
FF1
SPE
R
D
CL
Q
T
FF2
SPE
R
D
CL
Q
T
FF3
SPE
R
D
CL
Q
Q0
14
Q1
13
Q2
12
Q3
11
TC
15
TRUTH TABLE
INPUTS
OPERATING MODE
Reset (Clear)
Parallel Load
MR
L
H
H
Count
Inhibit
H
H
H
H = High Level, L = Low Level, X = Immaterial,
X
X
CP
X
PE
X
X
X
h
I (b)
X
TE
X
X
X
h
X
I (b)
SPE
X
I
I
h (c)
h (c)
h (c)
Pn
X
I
h
X
X
X
OUTPUTS
Qn
L
L
H
Count
qn
qn
TC
L
L
(a)
(a)
(a)
L
= Transition from low to high
FN2469 Rev 2.00
September 1995
Page 2 of 9
HCS161MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
10mA
DC Drain Current, Any One Output
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
JA
JC
o
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73 C/W
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . . 100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50A, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50A, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50A, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50A, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
A
A
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
-
V
1
2, 3
0.5
5.0
-
A
A
-
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC)
7, 8A, 8B
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic “1”, and VO
0.5V is recognized as a logic “0”.
FN2469 Rev 2.00
September 1995
Page 3 of 9
HCS161MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
CP to TC
TPHL
TPLH
VCC = 4.5V
9
10, 11
TE to TC
TPHL
TPLH
VCC = 4.5V
9
10, 11
MR to Qn
TPHL
VCC = 4.5V
9
10, 11
MR to TC
TPHL
VCC = 4.5V
9
10, 11
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
MAX
34
39
37
42
23
26
41
45
46
51
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CP to Qn
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C
MIN
-
-
-
-
-
-
MAX
54
84
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
MAX
0.75
-
-
UNITS
mA
mA
mA
PARAMETER
Quiescent Current
Output Current (Sink)
Output Current
(Source)
SYMBOL
ICC
IOL
IOH
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
FN2469 Rev 2.00
September 1995
Page 4 of 9
HCS161MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
VCC
-0.1
-
-
2
2
2
2
2
2
2
2
MAX
0.1
-
5
-
39
39
43
43
27
27
45
51
UNITS
V
V
A
-
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
CP to Qn
SYMBOL
VOL
VOH
IIN
FN
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50A
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50A
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
CP to TC
TPHL
TPLH
TE to TC
TPHL
TPLH
MR to Qn
MR to TC
NOTES:
TPHL
TPHL
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests, VO
4.0V is recognized as a logic “1”, and VO
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
ICC
IOL/IOH
GROUP B
SUBGROUP
5
5
DELTA LIMIT
12A
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
FN2469 Rev 2.00
September 1995
Page 5 of 9
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